Functional panel, light-emitting panel, display panel, and sensor panel

ABSTRACT

A functional panel is provided. The functional panel includes a first substrate, a second substrate, a bonding layer, a functional element, a protective layer, and a terminal. The bonding layer is positioned between the first and second substrates. The functional element is surrounded by the first substrate, the second substrate, and the bonding layer. The terminal is electrically connected to the functional element and provided not to overlap with one of the first and second substrates. The protective layer is provided to be in contact with side surfaces of the first and second substrates and an exposed surface of the bonding layer. A surface of the terminal is partly exposed without being covered with the protective layer. The surface of the terminal partly includes a material having a lower ionization tendency than hydrogen.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One embodiment of the present invention relates to a functional panelincluding a functional element having a variety of functions. Inparticular, one embodiment of the present invention relates to alight-emitting panel, a display panel, and a sensor panel.

Note that one embodiment of the present invention is not limited to theabove technical field. Examples of the technical field of one embodimentof the present invention include a semiconductor device, a displaydevice, a light-emitting device, a power storage device, a storagedevice, an electronic device, a lighting device, an input device, aninput/output device, a driving method thereof, and a manufacturingmethod thereof.

In this specification and the like, a semiconductor device means alltypes of devices that can function by utilizing semiconductorcharacteristics; a transistor, a semiconductor circuit, an arithmeticunit, a memory device, an imaging device, an electro-optical device, apower generation device (e.g., a thin film solar cell and an organicthin film solar cell), an electronic device, and the like are each anembodiment of the semiconductor device.

2. Description of the Related Art

A display device in which a liquid crystal element is used is known. Inaddition, examples of the display device include a light-emitting deviceincluding a light-emitting element such as an organic electroluminescent(EL) element or a light-emitting diode (LED), and an electronic paperperforming display by an electrophoretic method or the like.

For example, in a basic structure of an organic EL element, a layercontaining a light-emitting organic compound is provided between a pairof electrodes. By voltage application to this element, thelight-emitting organic compound can emit light. A display deviceincluding such an organic EL element can be thin and lightweight andhave high contrast and low power consumption.

Patent Document 1 discloses a flexible light-emitting device in which anorganic EL element is used.

Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2014-197522

SUMMARY OF THE INVENTION

An object of one embodiment of the present invention is to provide afunctional panel such as a display panel, a light-emitting panel, asensor panel, or a touch panel with high reliability. Alternatively, anobject of one embodiment of the present invention is to provide afunctional panel in which deterioration due to impurities such as wateris suppressed. Alternatively, an object of one embodiment of the presentinvention is to provide a functional panel in which an electricalfailure at a terminal portion is suppressed. Alternatively, an object ofone embodiment of the present invention is to provide a novel functionalpanel, a novel light-emitting panel, a novel display panel, a novelsensor panel, a novel touch panel, a novel electronic device, or thelike.

Note that the descriptions of these objects do not disturb the existenceof other objects. Note that in one embodiment of the present invention,there is no need to achieve all the objects. Objects other than theabove objects can be derived from the description of the specificationand like.

One embodiment of the present invention is a functional panel includinga first substrate, a second substrate, a bonding layer, a functionalelement, a protective layer, and a terminal. The bonding layer ispositioned between the first substrate and the second substrate. Thefunctional element is surrounded by the first substrate, the secondsubstrate, and the bonding layer. The terminal is electrically connectedto the functional element, and is provided not to overlap with one ofthe first substrate and the second substrate. The protective layer isprovided to be in contact with side surfaces of the first substrate andthe second substrate and an exposed surface of the bonding layer. Partof a surface of the terminal is exposed without being covered with theprotective layer.

In the above structure, part of the exposed surface of the terminalpreferably includes a material having a lower ionization tendency thanhydrogen. In that case, the material is preferably palladium, iridium,gold, or platinum.

In the above structure, the protective layer preferably includes atleast one of aluminum oxide, hafnium oxide, zirconium oxide, titaniumoxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalumoxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide,cobalt oxide, tellurium oxide, barium titanate, titanium nitride,tantalum nitride, aluminum nitride, tungsten nitride, cobalt nitride,manganese nitride, and hafnium nitride.

In the above structure, the terminal preferably has a stacked structurein which a second layer is stacked over a first layer. In that case, itis preferable that part of a surface of the second layer be exposed andthe second layer include a material having a lower ionization tendencythan a material included in the first layer. Furthermore, at this time,the second layer preferably includes palladium, iridium, gold, orplatinum.

In the above structure, the first substrate and the second substratepreferably have flexibility.

It is preferable that the above functional panel further include an FPCelectrically connected to the terminal.

Another embodiment of the present invention is a light-emitting panelincluding the functional panel, in which the functional element includesa light-emitting element. Another embodiment of the present invention isa display panel including the functional panel, in which the functionalelement includes a display element. Another embodiment of the presentinvention is a display panel including the functional panel, in whichthe functional element includes a display element and a transistor.Another embodiment of the present invention is a sensor panel includingthe functional panel, in which the functional element includes a sensorelement.

According to one embodiment of the present invention, a highly reliablefunctional panel can be provided. Alternatively, a functional panel inwhich deterioration due to impurities such as water is suppressed can beprovided. Alternatively, a functional panel in which an electricalfailure at a terminal portion is suppressed can be provided.Alternatively, a novel functional panel, a novel light-emitting panel, anovel display panel, a novel sensor panel, a novel touch panel, a novelelectronic device, or the like can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D illustrate structure examples of a functional panel ofone Embodiment;

FIGS. 2A to 2D illustrate an example of a method for manufacturing afunctional panel of Embodiment;

FIGS. 3A to 3C illustrate an example of a method for manufacturing afunctional panel of Embodiment;

FIGS. 4A to 4C each illustrate a structure example of a functional panelof Embodiment;

FIG. 5 illustrates a structure example of a functional panel ofEmbodiment;

FIGS. 6A to 6D illustrate examples of a light-emitting panel ofEmbodiment;

FIGS. 7A and 7B each illustrate an example of a light-emitting panel ofEmbodiment;

FIG. 8 illustrates an example of a light-emitting panel of Embodiment;

FIG. 9 illustrates an example of a light-emitting panel of Embodiment;

FIGS. 10A to 10E illustrate examples of a light-emitting panel ofEmbodiment;

FIG. 11 illustrates an example of a light-emitting panel of Embodiment;

FIGS. 12A to 12C illustrate an example of a method for manufacturing alight-emitting panel of Embodiment;

FIGS. 13A to 13C illustrate an example of a method for manufacturing alight-emitting panel of Embodiment;

FIGS. 14A to 14C illustrate an example of a touch panel of Embodiment;

FIGS. 15A and 15B illustrate an example of a touch panel of Embodiment;

FIGS. 16A to 16C illustrate an example of a touch panel of Embodiment;

FIG. 17 illustrates an example of a touch panel of Embodiment;

FIGS. 18A to 18C illustrate an example of a touch panel of Embodiment;

FIG. 19 illustrates a structure of a deposition apparatus of Embodiment;

FIGS. 20A, 20B, 20C1, 20C2, 20D, 20E, 20F, 20G, and 20H illustrateexamples of an electronic device and a lighting device of Embodiment;

FIGS. 21A1, 21A2, 21B, 21C, 21D, 21E, 21F, 21G, 21H, and 21I illustrateexamples of an electronic device of Embodiment;

FIGS. 22A to 22E illustrate examples of an electronic device ofEmbodiment; and

FIGS. 23A to 23C illustrate examples of an electronic device ofEmbodiment.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments will be described in detail with reference to drawings. Notethat the present invention is not limited to the description below, andit is easily understood by those skilled in the art that various changesand modifications can be made without departing from the spirit andscope of the present invention. Accordingly, the present inventionshould not be interpreted as being limited to the content of theembodiments below.

Note that in the structures of the invention described below, the sameportions or portions having similar functions are denoted by the samereference numerals in different drawings, and description of suchportions is not repeated. Further, the same hatching pattern is appliedto portions having similar functions, and the portions are notespecially denoted by reference numerals in some cases.

Note that in each drawing described in this specification, the size, thelayer thickness, or the region of each component is exaggerated forclarity in some cases. Therefore, embodiments of the present inventionare not limited to such a scale.

Note that in this specification and the like, ordinal numbers such as“first”, “second”, and the like are used in order to avoid confusionamong components and do not limit the number.

Embodiment 1

A functional panel of one embodiment of the present invention isdescribed below.

The functional panel of one embodiment of the present invention has astructure in which a functional element is sandwiched between a pair ofsubstrates. The pair of substrates are bonded to each other with abonding layer. The functional element is sealed by being surrounded bythe pair of substrates and the bounding layer. Furthermore, a terminalelectrically connected to the functional element is provided for one ofthe pair of substrates.

A protective layer is provided to be in contact with at least an exposedsurface of the bonding layer. The protective layer is provided to coverthe bonding layer; furthermore, the protective layer may be provided topartially or entirely cover surfaces of the pair of substrates. Theprotective layer can be formed using a material having low moisturepermeability. The protective layer is positioned between the bondinglayer and the outside air, and has a function of preventing impuritiessuch as moisture included in the outside air from diffusing into thebonding layer. Such a protective layer can prevent impurities such aswater from diffusing into the functional element through the bondinglayer.

The protective layer is provided to cover at least an exposed sideportion of the bonding layer and part of the substrates around theexposed side portion of the bonding layer. The protective layer ispreferably formed using a deposition method with favorable stepcoverage. As one of the methods, an atomic layer deposition (ALD) methodcan be given.

As the protective layer, for example, a material containing aluminumoxide, hafnium oxide, zirconium oxide, titanium oxide, zinc oxide,indium oxide, tin oxide, indium tin oxide, tantalum oxide, siliconoxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide,tellurium oxide, barium titanate, titanium nitride, tantalum nitride,aluminum nitride, tungsten nitride, cobalt nitride, manganese nitride,hafnium nitride, or the like can be used. Specifically, a materialcontaining at least one of these materials as a main component ispreferably used. The film containing any of the above materials as amain component has high moisture resistance and thus can be favorablyused as a barrier film against water and the like.

A “main component” in this specification refers to a component whosecontent is the highest in all components. Alternatively, it refers to acomponent whose content is greater than or equal to 50 vol % and lessthan 100 vol %, or greater than or equal to 50 wt % and less than 100 wt%. A film contains a plurality of materials as main components in somecases when the film includes a mixture of three or more materials(including the case where the film includes three or more constituentelements), for example. In that case, the film contains the plurality ofmaterials as the main components at greater than or equal to 1 vol % andless than 100 vol %, or at greater than or equal to 1 wt % and less than100 wt %.

A material that can be formed by an ALD method is preferably used forthe protective layer, for example. By an ALD method, a dense protectivelayer in which defects such as cracks or pinholes are reduced or aprotective layer with uniform thickness can be formed. Furthermore,damage caused to the vicinity of a surface of a sample in forming theprotective layer can be reduced.

When an ALD method is employed, the protective layer with few defects,which is uniform in thickness, can be formed on a surface with complexunevenness, and the top, side, and rear surfaces of the functionalpanel.

Here, a conductive material that is not easily oxidized is preferablyused for at least part of an exposed surface of the terminal. In otherwords, a material that is less likely to be ionized is preferably used.The material that is less likely to be ionized is, in other words, amaterial whose standard oxidation-reduction potential (also referred toas standard electrode potential) is high. Even in the case where thesurface of the material is subjected to the air containing water andoxygen, an oxide film is not formed on the surface, or the thickness ofa formed oxide film is extremely small. Thus, contact resistance of theterminal can be reduced.

Furthermore, when the protective layer is formed by an ALD method, athin film is not, or not easily formed on a surface of the material thatis not easily oxidized. That is, in the case of using a terminalincluding such a material on its surface, forming a portion on theterminal in a self-aligned manner in which the protective layer is notformed is performed, even without performing masking or the like overthe terminal, and the terminal can have an exposed surface.

Specifically, in an ALD method, a thin film can be formed on the surfaceof the sample by repeatedly supplying a gas containing a precursor and agas containing an oxidizing material to the surface of the sample. Atthis time, a conductive material the surface of which is not, or noteasily oxidized by an oxidizing gas is used for the surface of theterminal, whereby the thin film is not formed on the surface of theterminal, or formation of the thin film can be prevented.

In an ALD method, when water (H₂O) is used as the oxidizing material, amaterial having a lower ionization tendency than hydrogen (H₂), that is,a conductive material having a higher standard oxidation-reductionpotential than hydrogen (0 V) is preferably used because the conductivematerial is not oxidized. Examples of such a material include copper,mercury, silver, iridium, palladium, gold, and platinum.

When a material (e.g., ozone (O₃)) having higher oxidation propertiesthan water is used as the oxidizing material in an ALD method, iridium,palladium, gold, platinum, or the like with an extremely lowerionization tendency is preferably used.

The terminal preferably has a stacked structure. In that case, theabove-described metal that is not easily oxidized, an alloy containingthe metal, or the like is preferably used as the material used for asurface side of the terminal. As the material used for a portion otherthan the surface side of the terminal, a material having a higherionization tendency than the material used for the surface side of theterminal, that is, a material having a lower standardoxidation-reduction potential than the material used for the surfaceside of the terminal is preferably used. Because the above-describedmaterial that is not easily oxidized is relatively expensive, the use ofthe material only in a surface portion of the terminal allows costreduction.

More specific structure examples and examples of a manufacturing methodare described below with reference to drawings.

STRUCTURE EXAMPLE [Functional Panel]

FIG. 1A is a schematic top view of a functional panel 100 of oneembodiment of the present invention. FIG. 1B is a schematiccross-sectional view taken along the line A1-A2 in FIG. 1A. Note thatsome components (e.g., a protective layer 120) are not illustrated inFIG. 1A for simplicity.

The functional panel 100 includes a substrate 101, a substrate 102, afunctional element 111, a plurality of terminals 110, a bonding layer121, an insulating layer 122, wirings 123, and the like.

The functional element 111 is formed over the substrate 101. Thefunctional element 111 is sealed by being surrounded by the substrate101, the substrate 102, and the bonding layer 121.

FIGS. 1A and 1B illustrate an example in which the bonding layer 121 isprovided to surround the functional element 111. In FIG. 1B, a space 124is provided in the area surrounded by the bonding layer 121, thesubstrate 101, and the substrate 102.

The protective layer 120 is provided in contact with exposed surfaces(also referred to as side surfaces or end surfaces) of the bonding layer121. The protective layer 120 is preferably provided also in a regionwhere the bonding layer 121 and the substrate 101 (or a structure formedover the substrate 101) are in contact with each other and a regionwhere the bonding layer 121 and the substrate 102 (or a structure formedover the substrate 102) are in contact with each other. With such astructure, a gap formed between the bonding layer 121 and the substrate101 or the substrate 102 can be effectively filled, and impurities canbe prevented from diffusing into the functional element 111.

FIG. 1B illustrates an example in which the protective layer 120 isprovided to cover a top surface and side surfaces of the substrate 101,a bottom surface and side surfaces of the substrate 102, and the sidesurfaces of the bonding layer 121.

The functional element 111 and the terminal 110 are electricallyconnected by the wiring 123. The terminal 110 can be used as a terminalwith which a connector such as an FPC, an integrated circuit such as anIC, and the like are mounted on the substrate 101. Alternatively, theterminal 110 may be used for the contact with a measurement probe, atest probe, or the like.

In FIG. 1B, the terminal 110 has a stacked structure in which aconductive layer 110 a is stacked over a conductive layer 110 b. Here,part of the wiring 123 functions as the conductive layer 110 b.

The conductive layer 110 a of the terminal 110 is provided so that partof the surface thereof is exposed. Furthermore, the protective layer 120has an opening overlapping with part of the surface of the terminal 110.

The conductive layer 110 a includes the above conductive material thatis not easily oxidized. With such a structure, contact resistance of theterminal 110 can be reduced.

As shown in FIG. 1B, it is preferable that the terminal 110 have astacked structure in which two or more conductive layers are stacked andthe above conductive material that is not easily oxidized be used onlyfor the conductive layer 110 a positioned as an upper layer of thestacked structure because cost reduction can be achieved. At this time,as the conductive layer 110 a, a material having a lower ionizationtendency than the conductive layer 110 b, that is, a material having ahigher standard oxidation-reduction potential than the conductive layer110 b is preferably used.

The insulating layer 122 is provided to cover the wiring 123. Theinsulating layer 122 has a function of protecting the wiring 123. Forexample, the insulating layer 122 may have a function of suppressingoxidation of the surface of the wiring 123. Note that the insulatinglayer 122 is not necessarily provided. The insulating layer 122 may beprovided only in a portion overlapping with the bonding layer 121 and onthe outer side of the bonding layer 121. Although FIG. 1B shows the casewhere the insulating layer 122 is provided to cover the wiring 123, theinsulating layer 122 may be provided to cover both the functionalelement 111 and the wiring 123, or the insulating layer 122 may includetwo or more insulating layers, one of which covers the wiring 123 andanother of which covers the functional element 111.

The protective layer 120 is provided to be in contact with a surface ofthe insulating layer 122 in the region outside the bonding layer 121.Such a structure can effectively suppress diffusion of impurities fromthe outside through the insulating layer 122.

FIGS. 1C and 1D each illustrate a structure example which is partlydifferent from that shown in FIG. 1B.

FIG. 1C shows the case where the protective layer 120 is not provided onpart of the top surface of the substrate 102 and part of the bottomsurface of the substrate 101. The protective layer 120 is provided to bein contact with the side surfaces and part of the bottom surface of thesubstrate 101, the side surfaces and part of the top surface of thesubstrate 102, and the side surfaces of the bonding layer 121.

FIG. 1C illustrates an example in which a space between the substrates101 and 102 is filled with the bonding layer 121. That is, the bondinglayer 121 is provided to fill the space 124 in FIG. 1B and to partlyoverlap with the functional element 111.

FIG. 1D illustrates an example in which the protective layer 120 is notprovided on the top surface of the substrate 102 and the bottom surfaceof the substrate 101. The protective layer 120 is provided to be incontact with part of the side surfaces of the substrate 101, part of theside surfaces of the substrate 102, and the side surfaces of the bondinglayer 121.

Furthermore, in the example illustrated in FIG. 1D, the terminal 110 isformed using part of the wiring 123. At this time, the wiring 123 isformed using the above-described conductive material that is not easilyoxidized. That is, the wiring 123 and the conductive layer 110 a may beformed using the same material.

[Functional Element]

As the functional element 111, an element having any of functions suchas an optical element, a sensor element, an electrical element, asemiconductor element, and a memory element can be used.

As the optical element, a display element, a light-emitting element, alight-receiving element, or the like can be used. For example, a liquidcrystal element, an organic EL element, an inorganic EL element, an LEDelement, a photoelectric conversion element, or the like can be used.Alternatively, an element whose contrast, reflectivity, transmittivity,or the like is changed by an electromagnetic action may be used. The useof a display element, a light-emitting element, or the like enables thefunctional panel to function as a display panel. Alternatively, thefunctional panel may function as a lighting panel using a light-emittingelement. Alternatively, the functional panel may function as a solarcell panel using a light-receiving element..

Examples of the display element and the light-emitting element includean electroluminescence (EL) element (e.g., an EL element includingorganic and inorganic materials, an organic EL element, or an inorganicEL element), an LED (e.g., a white LED, a red LED, a green LED, or ablue LED), a transistor (a transistor that emits light depending oncurrent), an electron emitter, a liquid crystal element, electronic ink,an electrophoretic element, a grating light valve (GLV), a plasmadisplay panel (PDP), a display element using micro electro mechanicalsystems (MEMS), a digital micromirror device (DMD), a digital microshutter (DMS), MIRASOL (registered trademark), an interferometricmodulator (IMOD) element, a MEMS shutter display element, anoptical-interference-type MEMS display element, an electrowettingelement, a piezoelectric ceramic display, a display element including acarbon nanotube, and the like.

As the sensor element, a sensor that has a function of measuring, forexample, force, displacement, position, speed, acceleration, angularvelocity, rotational frequency, distance, light, liquid, magnetism,temperature, chemical substance, sound, time, hardness, electric field,electric current, voltage, electric power, radiation, flow rate,humidity, gradient, oscillation, odor, or infrared rays can be used. Forexample, a sensor element using MEMS, a photoelectric conversionelement, a semiconductor circuit can be used.

Examples of the electrical element and the semiconductor element includea resistor, a capacitor, a transistor, a circuit element, a coil, aninductor, a diode, and a switch.

Examples of the memory element include non-volatile memory elements suchas a flash memory, a magnetoresistive random access memory (MRAM), aphase change RAM (PRAM), a resistance RAM (ReRAM), and a ferroelectricRAM (FeRAM), and volatile memory elements such as a dynamic RAM (DRAM)and an static RAM (SRAM).

[Example of Manufacturing Method]

An example of a method for manufacturing a functional panel of oneembodiment of the present invention is described below.

Note that films included in the functional panel (i.e., an insulatingfilm, a semiconductor film, a conductive film, and the like) can beformed by a deposition method such as a sputtering method, a chemicalvapor deposition (CVD) method, a vacuum evaporation method, a pulsedlaser deposition (PLD) method, or an ALD method. Alternatively, adeposition method such as a plating method (including electroplating orelectroless plating), a coating method, or a printing method may beused. Typical deposition methods are a sputtering method and aplasma-enhanced chemical vapor deposition (PECVD) method; however, athermal CVD method such as a metal organic chemical vapor deposition(MOCVD) method may be used.

When the thin films included in the functional panel are processed, aphotolithography method or the like can be employed. Alternatively,island-shaped thin films may be formed by a film formation method usinga blocking mask. Alternatively, the thin films may be processed by anano-imprinting method, a sandblasting method, a lift-off method, or thelike.

As light used to form the resist mask by a photolithography method,light with an i-line (with a wavelength of 365 nm), light with a g-line(with a wavelength of 436 nm), light with an h-line (with a wavelengthof 405 nm), or light in which the i-line, the g-line, and the h-line aremixed can be used. Alternatively, ultraviolet light, KrF laser light,ArF laser light, or the like can be used. Exposure may be performed byliquid immersion exposure technique. As the light for the exposure,extreme ultra-violet light (EUV) or X-rays may be used. Instead of thelight for the exposure, an electron beam can be used. It is preferableto use EUV, X-rays, or an electron beam because extremely minuteprocessing can be performed. Note that in the case of performingexposure by scanning of a beam such as an electron beam, a photomask isnot needed.

For etching of the thin film, dry etching, wet etching, a sandblastmethod, or the like can be used.

First, the wiring 123, the insulating layer 122, the functional element111, and the like are formed over the substrate 101 (FIG. 2A).

There is no particular limitation on the properties of a material andthe like of the substrate 101 and the substrate 102 as long as thematerial has heat resistance enough to withstand at least heat treatmentto be performed later. For example, a glass substrate, a ceramicsubstrate, a quartz substrate, a sapphire substrate, or the like may beused as the substrate 101 and the substrate 102. Alternatively, a singlecrystal semiconductor substrate or a polycrystalline semiconductorsubstrate such as a silicon substrate or a silicon carbide substrate, acompound semiconductor substrate such as a silicon germanium substrate,an SOI substrate, or the like may be used as the substrate 101 and thesubstrate 102. Furthermore, any of these substrates further providedwith a semiconductor element may be used as the substrate 101 and thesubstrate 102.

When flexible substrates are used as the substrate 101 and the substrate102, the functional panel 100 can be flexible. At this time, thefunctional element 111 and the like may be directly formed over theflexible substrate 101. Alternatively, the structure may be employed inwhich the functional element 111 is formed with a separation layerprovided between a separate base and the functional element 111 and thenseparated from the separate base to be transferred to the substrate 101.At this time, as the substrate 101 to which the functional element 111and the like are transferred, a substrate having relatively low heatresistance or a flexible substrate can be used.

For the wiring 123, a material having a higher ionization tendency thanthe conductive layer 110 a to be formed later can be used. For example,the wiring 123 can be formed using a metal selected from chromium,copper, aluminum, gold, silver, zinc, molybdenum, tantalum, titanium,tungsten, manganese, nickel, iron, cobalt, yttrium, and zirconium; analloy containing any of these metals as its component; or an alloycontaining a combination of any of these metals. Alternatively, anitride of the metal or the alloy may be used.

The wiring 123 may have a single layer structure or a stacked structureof two or more layers. For example, a single-layer structure of analuminum film containing silicon, a two-layer structure in which atitanium film is stacked over an aluminum film, a two-layer structure inwhich a titanium film is stacked over a titanium nitride film, atwo-layer structure in which a tungsten film is stacked over a titaniumnitride film, a two-layer structure in which a tungsten film is stackedover a tantalum nitride film or a tungsten nitride film, a three-layerstructure in which a titanium film, an aluminum film, and a titaniumfilm are stacked in this order, and the like can be given.Alternatively, an alloy film or a nitride film in which aluminum and oneor more elements selected from titanium, tantalum, tungsten, molybdenum,chromium, neodymium, and scandium are combined may be used.

The wiring 123 can be formed using an oxide conductive material or anitride conductive material. The wiring 123 can also be formed usingindium tin oxide, indium oxide containing tungsten oxide, indium zincoxide containing tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium zinc oxide, or indiumtin oxide to which silicon oxide is added.

The insulating layer 122 can be formed using an inorganic insulatingmaterial, an organic insulating material, or the like. For example, aninorganic insulating material such as silicon oxide, silicon oxynitride,silicon nitride, silicon nitride oxide, aluminum nitride, aluminumnitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide,gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, orhafnium oxynitride can be used. Alternatively, an organic insulatingmaterial such as acrylic, epoxy, polyimide, or siloxane can be used.

The insulating layer 122 is preferably formed so that an opening isprovided in a portion over the wiring 123 to be the terminal 110 later.

The functional element 111 is formed by a method that is suitable for anelement used as the functional element 111.

Next, the conductive layer 110 a is formed over the wiring 123 (FIG.2B). Here, description is made on the case where the conductive layer110 a is formed by a plating method.

In a portion of the wiring 123 to be the conductive layer 110 b, amaterial that functions as a seed layer for plating is used.Alternatively, a thin film that functions as the seed layer is formedover the conductive layer 110 b. As a material that functions as theseed layer, a metal or an alloy suitable for the formation of theconductive layer 110 a is selected as appropriate; for example, nickel,an alloy of nickel and chromium, an alloy of nickel, chromium, andpalladium, or the like can be used. Alternatively, a thin film formedusing the same material as the conductive layer 110 a may be formed.When the wiring 123 functions as the seed layer, the step for formingthe thin film is not necessary.

Next, the conductive layer 110 a is formed by a plating method. Althoughthe conductive layer 110 a may be formed by electroplating, it ispreferable that the conductive layer 110 a be formed by electrolessplating. Since the insulating layer 122 is formed to cover portionsother than the portion to be the terminal 110, the conductive layer 110a can be selectively formed only on a material that functions as theseed layer. At this time, the insulating layer 122 is preferablyprovided to also cover a surface of the functional element 111.Furthermore, in the case where a thin film is formed in the portionsother than the portion to be the terminal 110 by plating, the thin filmmay be etched or left as it is.

As described above, the terminal 110 can be formed. The terminal 110 hasa stacked structure in which the conductive layer 110 a is stacked overthe conductive layer 110 b.

Then, the substrate 101 and the substrate 102 are bonded to each otherwith the bonding layer 121 (FIG. 2C).

As the bonding layer 121, a resin and the like which can bond thesubstrate 101 and the substrate 102 can be used. For example, a varietyof curable resins such as a reactive curable resin, a thermosettingresin, an anaerobic curable resin, and a photo-curable resin (e.g., anultraviolet curable resin) can be used. Examples of such resins includean epoxy resin, an acrylic resin, a silicone resin, a phenol resin, apolyimide resin, an imide resin, a polyvinyl chloride (PVC) resin, apolyvinyl butyral (PVB) resin, an ethylene vinyl acetate (EVA) resin,and the like. In particular, a material with low moisture permeability,such as an epoxy resin, is preferable. Alternatively, atwo-component-mixture-type resin may be used. Further alternatively, anadhesive sheet or the like may be used.

Next, the protective layer 120 is formed (FIG. 2D).

The protective layer 120 can be formed by the above-described depositionmethod. The protective layer 120 is preferably formed by an ALD method.

Formation of the protective layer 120 by an ALD method is described withreference to FIGS. 3A to 3C. FIGS. 3A to 3C are enlarged schematic viewsof the vicinity of the terminal 110.

FIG. 3A shows the state before the deposition. As shown in FIG. 3A,hydroxyl groups (OH) are adsorbed on the surfaces of the substrate 101,the substrate 102, the insulating layer 122, the bonding layer 121, andthe like. In other words, these surfaces are covered with the hydroxylgroups.

In contrast, the conductive layer 110 a is a material that is not easilyoxidized; thus, the hydroxyl groups (OH) are hardly adsorbed on thesurface of the conductive layer 110 a.

FIG. 3B shows the state at the early stage of the deposition in which aprecursor (MR_(x)) including a metal M and x ligands R are used. When agas containing the precursor is supplied, the precursor reacts with thehydroxyl groups on the surfaces of the substrate 101 and the like, andMR_(x-1) in the precursor is substituted for the hydrogen in thehydroxyl groups. At this time, a molecule (HR) containing the ligand Rand the hydrogen, and the like are generated and are exhausted (notshown). As a result, as shown in FIG. 3B, the surfaces of the substrate101 and the like are covered with MR_(x-1) including the metal M and theligand R.

Next, when a gas containing an oxidizing material is supplied, hydroxylgroups are substituted for the ligand R in the MR_(x-1) (not shown). Asa result, the outermost surfaces of the substrate 101 and the like arecovered with the hydroxyl groups. At that time, adjacent hydroxyl groupsmay generate a M-O-M bond by a dehydration condensation reaction.

By repetition of the above process, the protective layer 120 containingan oxide of metal M as its main component can be formed.

Here, hydroxyl groups do not exist on the surface of the conductivelayer 110 a at the early stage as described above; thus, a reactionbetween the precursor and the hydroxyl groups is not generated on thesurface of the conductive layer 110 a. Furthermore, when the gascontaining the oxidizing material after that is supplied, the surface ofthe conductive layer 110 a is not oxidized since the conductive layer110 a is formed of a material that is not easily oxidized. Even afterthe step of supplying the oxidizing material, the hydroxyl groups do notexist on the conductive layer 110 a. Thus, reaction with thesubsequently supplied precursor is not generated. Consequently, as shownin FIG. 3C, the protective layer 120 is not formed on the conductivelayer 110 a, and is formed to cover the surfaces other than the surfaceof the conductive layer 110 a. That is, the surface of the terminal 110can be exposed without a special step such as masking treatment that isperformed so that a portion is not covered with the protective layer120.

Through the above steps, the functional panel 100 that is covered withthe protective layer 120, with the surface of the terminal 110 exposed,can be manufactured (FIG. 2D).

Although an example in which the protective layer 120 is formed by anALD method is described here, the deposition method is not limited tothis. For example, the protective layer 120 can be formed by theabove-described deposition method other than an ALD method. In thatcase, when the protective layer 120 is formed on the terminal 110 in thedeposition, the protective layer 120 is processed so that an opening isformed in a portion to be the terminal 110 in a later step.

MODIFICATION EXAMPLE 1

In the above example of the manufacturing method, the conductive layer110 a that is positioned on the surface side of the terminal 110 isformed by a plating method; however, the conductive layer 110 a can beformed by a method different from a plating method. Examples of afunctional panel that is formed by a manufacturing method partlydifferent from the above method are described below.

FIG. 4A shows an example in which the insulating layer 122 is providedto cover part of the conductive layer 110 a of the terminal 110. Withsuch a structure, end portions of the conductive layer 110 a can beprotected.

The functional panel 100 having the structure shown in FIG. 4A can beformed by the following method, for example. In the above example of themanufacturing method, after the formation of the wiring 123, aconductive film to be the conductive layer 110 a is formed to cover thewiring 123; then, part of the conductive film is etched to be removed,whereby the conductive layer 110 a can be formed over the wiring 123.After that, an insulating film to be the insulating layer 122 is formed;then, part of the insulating film is etched to be removed, whereby theinsulating layer 122 having an opening over the conductive layer 110 acan be formed. After that, the substrate 101 and the substrate 102 arebonded to each other with the bonding layer 121 and the protective layer120 is formed, whereby the functional panel 100 having the structureshown in FIG. 4A can be formed.

Part of the wiring 123 is etched in some cases in processing of theconductive layer 110 a. Thus, in processing of the conductive layer 110a, it is preferable that etching conditions be adjusted or the materialsof the conductive layer 110 a and wiring 123 be optimally selected sothat the wiring 123 is not removed.

FIG. 4B shows an example in which the conductive layer 110 a of theterminal 110 is provided to cover edges of the opening of the insulatinglayer 122. With such a structure, the surface area of the terminal 110can be larger than the area of the opening of the insulating layer 122.As a result, the FPC or the like and the terminal can be easily aligned,and resistance can be decreased by an increase in the contact areabetween a terminal of the FPC or the like and the terminal 110, forexample.

The functional panel 100 having the structure shown in FIG. 4B can beformed by the following method, for example. In the above example of themanufacturing method, the conductive film to be the conductive layer 110a is formed after the formation of the insulating layer 122; then, partof the conductive film is etched to be removed, whereby the conductivelayer 110 a can be formed. After that, the substrate 101 and thesubstrate 102 are bonded to each other with the bonding layer 121, andthe protective layer 120 is formed, whereby the functional panel 100having the structure shown in FIG. 4B can be formed.

In such a manufacturing method, in processing of the conductive layer110 a, the insulating layer 122 is provided under the portion to beetched of the conductive film to be the conductive layer 110 a. Thus, aproblem in that part of the wiring 123 is etched by etching of theconductive film can be suppressed.

FIG. 4C shows an example in which the conductive layer 110 a hasconductive particles 112. The conductive particles 112 include theabove-described conductive material that is not easily oxidized. As theconductive particles 112, nanoparticles can be used, for example.Furthermore, the conductive particles 112 may form a stacked structureof two or more layers; in that case, the above-described conductivematerial that is not easily oxidized is used in a layer positionedclosest to the surface side.

The functional panel 100 having the structure shown in FIG. 4C can bemanufactured, in the above example of manufacturing method, by formingthe conductive layer 110 a including the conductive particles 112 afterthe formation of the insulating layer 122 and before forming theprotective layer 120. For example, the conductive layer 110 a includingthe conductive particles 112 can be formed by selectively dischargingpaste or ink containing the conductive particles 112 by a dispensingmethod, an ink jet method, or the like, and removing a solvent or abinder. The formation of the conductive layer 110 a may be performedbefore bonding the substrate 101 and the substrate 102, or after bondingthe substrate 101 and the substrate 102.

The protective layer 120 is not formed on the surfaces of the conductiveparticles 112. Thus, after the formation of the protective layer 120,the terminal 110 with the surfaces of the conductive particles 112exposed is formed. At this time, the protective layer 120 may be formedon part of the wiring 123 depending on the deposition conditions of theprotective layer 120 and the materials to be used in the surface of thewiring 123. Even in that case, the protective layer 120 is not formed ina portion where the conductive particles 112 are in contact with eachother or a portion where the conductive particles 112 are in contactwith the wiring 123; thus, electrical connection between the conductiveparticles 112 positioned in the vicinity of the surface of the terminal110 and the wiring 123 can be kept.

The above is the description of the modification examples.

MODIFICATION EXAMPLE 2

A material which can be used for the protective layer 120 can suppressdiffusion of impurities such as water. A layer containing such amaterial is provided between the functional element 111 and the bondinglayer 121, so that diffusion of impurities into the functional element111 can be effectively suppressed.

FIG. 5 shows a schematic cross-sectional view in which a protectivelayer 130 covering the functional element 111 is provided.

For the protective layer 130, a material that can be used for theprotective layer 120 can be used. Furthermore, it is preferable that theprotective layer 120 and the protective layer 130 be formed using thesame material and the same deposition apparatus, in which case cost canbe reduced.

The protective layer 130 can be formed by a method similar to that usedfor the protective layer 120. In particular, an ALD method is preferablyemployed. In an ALD method, a dense film can be formed at a lowtemperature, and damage to a layer positioned under a film to bedeposited (a surface on which the film is formed) in deposition isextremely small since plasma or the like is not used. Thus, theinfluence on the functional element 111 can be extremely small by thedeposition using an ALD method. For example, in the case of using anorganic EL element as the functional element 111, the protective layer130 is formed by an ALD method so as to cover an upper electrode, sothat damage to the organic EL element can be minimized.

The protective layer 130 is formed at the stage after forming thefunctional element 111 and before bonding the substrate 101 and thesubstrate 102. At this time, the protective layer 130 is formed by anALD method or the like, whereby the protective layer 130 is not formedon the terminal 110 and an opening of the protective layer 130 is formedon the terminal 110 in a self-aligned manner as shown in FIG. 5.

As shown in FIG. 5, the protective layer 120 covering the exposedsurface of the bonding layer 121 is preferably provided. With such astructure, the functional element 111 can be surrounded by theprotective layer 120 and the protective layer 130; thus, an extremelyreliable functional panel can be obtained.

The functional panel of one embodiment of the present invention is anextremely reliable functional panel in which diffusion of impurities issuppressed by the protective layer. Since the protective layer is formedon a portion other than the surface of the terminal in a self-alignedmanner, the terminal surface with low resistance can be exposed withouta special step, so that a functional panel in which the terminal isfavorably connected to the FPC and the like can be manufactured at a lowcost.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

Embodiment 2

In this embodiment, description is made on structure examples of alight-emitting panel and a display panel as examples of a functionalpanel of one embodiment of the present invention.

In this specification and the like, a light-emitting panel means the oneincluding at least a light-emitting element and having a panel-shapedstructure in which light emission can be extracted from thelight-emitting element. A display panel means the one including at leasta display element, having a panel-shaped structure, and having afunction of displaying an image and the like. The display panel mayinclude an electrical element or a semiconductor element such as atransistor, a capacitor, or a resistor. Here, in the case of using alight-emitting element as a display element of the display panel, it canalso be said that the display panel is one mode of the light-emittingpanel.

The light-emitting panel and the display panel of embodiments of thepresent invention each have a structure in which a light-emittingelement or a display element provided between a pair of substrates issealed with a sealing layer. Furthermore, the light-emitting panel andthe display panel of embodiments of the present invention each have astructure in which a protective layer is formed to cover an exposedportion of the sealing layer.

For example, in the case of using an organic EL element as the displayelement or the light-emitting element, degradation is caused bydiffusion of impurities such as water into the organic EL element. Inthe case of using a liquid crystal element as the display element, theresistance of liquid crystal is changed by the influence of theimpurities. In the case of a transistor, specifically a transistorincluding an oxide semiconductor in a semiconductor layer, electricalcharacteristics of the transistor might be changed by diffusion ofimpurities such as water into the semiconductor.

By the use of the protective layer for the light-emitting panel or thedisplay panel, diffusion of impurities such as water from the outsideinto the panel can be suppressed. Thus, diffusion of the impurities intoa light-emitting element, a display element (an organic EL element, aliquid crystal element, or the like), a transistor, a circuit, a wiring,an electrode, and the like can be suppressed. As a result, an extremelyreliable light-emitting panel or display panel can be obtained.

A terminal electrically connected to the display element or thelight-emitting element is provided for one of the substrates. Theterminal is provided not to overlap with the other substrate, so thatelectrical connection between the terminal and a connector such as anFPC can be easily achieved. A conductive material that is not easilyoxidized is used in the surface of the terminal. Since the contactresistance with the connector or the like is reduced, delay orattenuation of an input signal can be suppressed, and problems such asdisconnection or poor connection due to heat generation at a contactpoint are less likely to occur.

Specifically, the following structure can be employed for example.

SPECIFIC EXAMPLE 1

FIG. 6A is a plan view of a light-emitting panel, and FIG. 6C is anexample of a cross-sectional view taken along dashed-dotted line B1-B2in FIG. 6A. The light-emitting panel in Specific Example 1 is atop-emission light-emitting panel (also referred to as a top-emissiondisplay panel) using a color filter method. In this embodiment, thelight-emitting panel can have, for example, a structure in whichsub-pixels of three colors of red (R), green (G), and blue (B) expressone color, or a structure in which sub-pixels of four colors of red (R),green (G), blue (B), and white (W) or sub-pixels of four colors of red(R), green (G), blue (B), and yellow (Y) express one color. The colorelement is not particularly limited and colors other than R, G, B, and Wmay be used. For example, yellow, cyan, magenta, and the like may beused.

The light-emitting panel illustrated in FIG. 6A includes alight-emitting portion 804, a driver circuit portion 806, and a flexibleprinted circuit (FPC) 808. Light-emitting elements and transistors inthe light-emitting portion 804 and the driver circuit portion 806 aresealed with a substrate 801, a substrate 803, and the bonding layer 121.

The light-emitting panel illustrated in FIG. 6C includes the substrate801, an adhesive layer 811, an insulating layer 813, a plurality oftransistors 820, the terminal 110 (the conductive layer 110 a and theconductive layer 110 b), an insulating layer 815, an insulating layer817, a plurality of light-emitting elements 830, an insulating layer821, the bonding layer 121, an overcoat 849, a coloring layer 845, alight-blocking layer 847, an insulating layer 843, an adhesive layer841, the substrate 803, and the protective layer 120. The bonding layer121, the overcoat 849, the insulating layer 843, the adhesive layer 841,the substrate 803, and the protective layer 120 transmit visible light.

The light-emitting portion 804 includes the transistors 820 and thelight-emitting elements 830 over the substrate 801 with the adhesivelayer 811 and the insulating layer 813 provided therebetween. Thelight-emitting element 830 includes a lower electrode 831 over theinsulating layer 817, an EL layer 833 over the lower electrode 831, andan upper electrode 835 over the EL layer 833. The lower electrode 831 iselectrically connected to a source electrode or a drain electrode of thetransistor 820. An end portion of the lower electrode 831 is coveredwith the insulating layer 821. The lower electrode 831 preferablyreflects visible light. The upper electrode 835 transmits visible light.

The light-emitting portion 804 also includes the coloring layer 845overlapping with the light-emitting element 830 and the light-blockinglayer 847 overlapping with the insulating layer 821. The coloring layer845 and the light-blocking layer 847 are covered with the overcoat 849.The space between the light-emitting element 830 and the overcoat 849 isfilled with the bonding layer 121.

The insulating layer 815 has an effect of suppressing diffusion ofimpurities into a semiconductor included in the transistor. As theinsulating layer 817, an insulating layer having a planarizationfunction is preferably selected in order to reduce surface unevennessdue to the transistor.

The driver circuit portion 806 includes a plurality of transistors overthe substrate 801 with the bonding layer 811 and the insulating layer813 provided therebetween. FIG. 6C illustrates one of the transistorsincluded in the driver circuit portion 806.

The insulating layer 813 and the substrate 801 are attached to eachother with the adhesive layer 811. The insulating layer 843 and thesubstrate 803 are attached to each other with the adhesive layer 841. Itis preferable to use films with low water permeability for theinsulating layers 813 and 843, in which case an impurity such as watercan be prevented from entering the light-emitting element 830 or thetransistor 820, leading to improved reliability of the light-emittingpanel.

The terminal 110 is electrically connected to an external input terminalthrough which a signal (e.g., a video signal, a clock signal, a startsignal, and a reset signal) or a potential from the outside istransmitted to the driver circuit portion 806. Here, an example isdescribed in which an FPC 808 is provided as the external inputterminal. To prevent an increase in the number of fabricating steps, theconductive layer 110 b included in the terminal 110 is preferably formedusing the same material and the same step(s) as those of the electrodeor the wiring in the light-emitting portion or the driver circuitportion. Here, an example is described in which the conductive layer 110b is formed using the same material and the same step as the electrodes(the source electrode and the drain electrode) of the transistor 820.

FIG. 6C shows an example in which the terminal 110 has a stackedstructure in which the conductive layer 110 a is stacked over theconductive layer 110 b. The conductive layer 110 a includes theconductive material described in Embodiment 1 that is not easilyoxidized. The conductive layer 110 a is provided over the insulatinglayer 817 and is electrically connected to the conductive layer 110 bthrough an opening provided in the insulating layer 817 and theinsulating layer 815.

For the conductive layer 110 a, a conductive material having a lowerionization tendency than hydrogen (H₂), or a conductive material havinga lower ionization tendency than the conductive layer 110 b can be used.For example, a metal selected from chromium, copper, aluminum, gold,silver, zinc, molybdenum, tantalum, titanium, tungsten, manganese,nickel, iron, cobalt, yttrium, and zirconium; an alloy containing any ofthese metal elements as its component; an alloy containing a combinationof any of these metal elements; or a nitride of any of the above metalsor the above alloy may be used for the conductive layer 110 b. Amaterial having a lower ionization tendency than any of theabove-described materials is used for the conductive layer 110 a; forexample, copper, mercury, silver, iridium, palladium, gold, or platinumcan be used. Specifically, iridium, palladium, gold, platinum, or thelike is preferably used for the conductive layer 110 a, in which caseoxide is not formed on the surface of the conductive layer 110 a even ina moist environment.

In the light-emitting panel illustrated in FIG. 6C, a connector 825 ispositioned over the substrate 803. The connector 825 is connected to theterminal 110 through the opening provided in the substrate 803, theadhesive layer 841, the insulating layer 843, the bonding layer 121. Theconnector 825 is connected to the FPC 808. The FPC 808 is electricallyconnected to the terminal 110 through the connector 825. When theterminal 110 and the substrate 803 overlap with each other, an openingformed in the substrate 803 (or the use of a substrate with an opening)allows the terminal 110, the connector 825, and the FPC 808 to beelectrically connected to each other.

The light-emitting panel in Specific Example 1 can be manufactured inthe following manner: the insulating layer 813, the transistor 820, andthe light-emitting element 830 are formed over a formation substratewith high heat resistance; the formation substrate is separated; and theinsulating layer 813, the transistor 820, and the light-emitting element830 are transferred to the substrate 801 and attached thereto with theadhesive layer 811. The light-emitting panel in Specific Example 1 canbe manufactured in the following manner: the insulating layer 843, thecoloring layer 845, and the light-blocking layer 847 are formed over aformation substrate with high heat resistance; the formation substrateis separated; and the insulating layer 843, the coloring layer 845, andthe light-blocking layer 847 are transferred to the substrate 803 andattached thereto with the adhesive layer 841.

In the case where a material with low heat resistance (e.g., resin) isused for a substrate, it is difficult to expose the substrate to hightemperatures in the manufacturing process. Thus, there is a limitationon conditions for forming a transistor and an insulating layer over thesubstrate. In the case of using a material with high water permeability(e.g., a resin), it is preferable to form a film at high temperatures tohave low water permeability. In the manufacturing method of thisembodiment, a transistor and the like can be formed over a formationsubstrate with high heat resistance; thus, a highly reliable transistorand a film with sufficiently low water permeability can be formed athigh temperatures. Then, the transistor and the film are transferred tothe substrate 801 and the substrate 803, whereby a highly reliablelight-emitting panel can be manufactured. Thus, according to oneembodiment of the present invention, a thin and/or lightweight andhighly reliable light-emitting panel can be provided. Details of themanufacturing method will be described later.

In FIG. 6C, the protective layer 120 is provided to cover an exposedportion of the light-emitting panel. Specifically, the protective layer120 is provided to partially or entirely cover the exposed portions ofthe substrate 803, the adhesive layer 841, the insulating layer 843, thebonding layer 121, the insulating layer 817, the insulating layer 815,the insulating layer 813, the adhesive layer 811, the substrate 801, andthe like.

As shown in FIG. 6C, an opening is preferably provided in part of theprotective layer 120 so that part of the top surface of the terminal 110electrically connected to the FPC 808 is exposed. Thus, electricalconnection between the FPC 808 and the terminal 110 can be easily made.

That is, the structure in which the protective layer 120 is provided tocover a region other than the connection portion (terminal portion) towhich the FPC 808 or the like is electrically connected is preferablebecause diffusion of impurities from the outside can be effectivelysuppressed.

As shown in FIG. 6C, the protective layer 120 is preferably provided onan inner wall of the opening in which the connector 825 is provided, inwhich case diffusion of impurities can be suppressed more effectively.For example, by forming the protective layer 120 after the formation ofthe opening, the protective layer 120 is not formed over the conductivelayer 110 a, and the protective layer 120 can be formed to cover theinner wall of the opening.

Note that the protective layer 120 is not necessarily provided on theinner wall of the opening. FIG. 7A shows an example in which theprotective layer 120 is formed before formation of the opening describedlater. FIG. 7B shows an example in which the protective layer 120 is notformed in the vicinity of the opening. FIG. 8 shows an example in whichthe protective layer 120 is formed after attachment of the FPC 808.

FIGS. 7A and 7B and FIG. 8 each show an example in which the conductivelayer 110 a is positioned closer to the conductive layer 110 b than theinsulating layer 815 is. The insulating layer 815 is provided to coverthe end portions of the conductive layer 110 a. The connector 825 isconnected to the terminal 110 through an opening provided in thesubstrate 803, the adhesive layer 841, the insulating layer 843, thebonding layer 121, the insulating layer 817, and the insulating layer815.

For the conductive layer 120, for example, a material containingaluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, zincoxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide,silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobaltoxide, tellurium oxide, barium titanate, titanium nitride, tantalumnitride, aluminum nitride, tungsten nitride, cobalt nitride, manganesenitride, hafnium nitride, or the like can be used; specifically, amaterial containing any of these materials as a main component ispreferable. Aluminum oxide, hafnium oxide, silicon nitride, or the likeis particularly preferable because it has extremely low moisturepermeability and can secure barrier properties even in the form of athin film.

Furthermore, in addition to the FPC 808, an IC may be mounted by a COGmethod, a COF method, or the like. FIG. 9 shows a schematiccross-sectional view in which an IC 809 is electrically connected to theterminal 110.

The IC 809 includes a terminal 810. The terminal 810 is electricallyconnected to the terminal 110 through the connector 825.

SPECIFIC EXAMPLE 2

FIG. 6B is a plan view of a light-emitting panel, and FIG. 6D is anexample of a cross-sectional view taken along dashed-dotted line B3-B4in FIG. 6B. The light-emitting panel described in Specific Example 2 isa top-emission light-emitting panel using a color filter method, whichis different from that described in Specific Example 1. Portionsdifferent from those in Specific Example 1 will be described in detailhere and the descriptions of portions common to those in SpecificExample 1 will be omitted.

The light-emitting panel illustrated in FIG. 6D is different from thelight-emitting panel illustrated in FIG. 6C in the aspects below.

The light-emitting panel illustrated in FIG. 6D includes a spacer 827over the insulating layer 821. The spacer 827 can adjust the distancebetween the substrate 801 and the substrate 803.

In the light-emitting panel illustrated in FIG. 6D, the substrate 801and the substrate 803 have different sizes. The connector 825 ispositioned over the insulating layer 843 and thus does not overlap withthe substrate 803. The connector 825 is connected to terminal 110through the opening provided in the insulating layer 843 and the bondinglayer 121. Since no opening needs to be provided in the substrate 803,there is no limitation on the material of the substrate 803.

The protective layer 120 is provided to cover the exposed portion of thelight-emitting panel. Specifically, the protective layer 120 is providedto partially or entirely cover the exposed portions of the substrate803, the adhesive layer 841, the insulating layer 843, the bonding layer121, the insulating layer 817, the insulating layer 815, the insulatinglayer 813, the adhesive layer 811, the substrate 801, and the like.

SPECIFIC EXAMPLE 3

FIG. 10A is a plan view of a light-emitting panel, and FIG. 10C is anexample of a cross-sectional view taken along dashed-dotted line B5-B6in FIG. 10A. The light-emitting panel described in Specific Example 3 isa top-emission light-emitting panel using a separate coloring method.Here, the difference from Specific Example 1 and Specific Example 2 isdescribed in detail, and description of the same points is omitted.

The light-emitting panel shown in FIGS. 10A and 10C includes aframe-shaped bonding layer 125. The substrate 803 is provided in contactwith the bonding layer 121 and the frame-shaped bonding layer 125.

The light-emitting panel shown in FIG. 10C includes the substrate 801,the bonding layer 811, the insulating layer 813, the plurality oftransistors, the terminal 110 (the conductive layer 110 a and theconductive layer 110 b), the insulating layer 815, the insulating layer817, the plurality of light-emitting elements 830, the insulating layer821, the bonding layer 121, the frame-shaped bonding layer 125, thesubstrate 803, and the protective layer 120. The frame-shaped bondinglayer 125, the protective layer 120, and the substrate 803 transmitvisible light.

The frame-shaped bonding layer 125 is preferably a layer having highergas barrier properties than the bonding layer 121. Accordingly, externalmoisture or oxygen can be prevented from entering the light-emittingpanel. Thus, the light-emitting panel can be highly reliable.

In Specific Example 3, light emitted from the light-emitting element 830in the light-emitting panel is extracted through the bonding layer 121.For this reason, the bonding layer 121 preferably has a higherlight-transmitting property and a higher refractive index than theframe-shaped sealing layer 125. Furthermore, the volume of the bondinglayer 121 is preferably less reduced by curing than that of theframe-shaped bonding layer 125.

The connector 825 is connected to the terminal 110 through an openingprovided in the substrate 803 and the bonding layer 121.

The light-emitting panel in Specific Example 3 can be manufactured inthe following manner: the insulating layer 813, the transistor 820, andthe light-emitting element 830 are formed over a formation substratewith high heat resistance; the formation substrate is separated; and theinsulating layer 813, the transistor 820, and the light-emitting element830 are transferred to the substrate 801 and attached thereto with theadhesive layer 811. A transistor and the like can be formed over theformation substrate with high heat resistance; thus, a highly reliabletransistor and a film with sufficiently low water permeability can beformed at high temperatures. Then, the transistor and the film aretransferred to the substrate 801, whereby a highly reliablelight-emitting panel can be manufactured. Thus, according to oneembodiment of the present invention, a thin and/or lightweight andhighly reliable light-emitting panel can be provided.

The protective layer 120 is provided to cover the exposed portion of thelight-emitting panel. Specifically, the protective layer 120 is providedto partially or entirely cover the exposed portions of the substrate803, the bonding layer 121, the bonding layer 125, the insulating layer817, the insulating layer 815, the insulating layer 813, the adhesivelayer 811, the substrate 801, and the like.

SPECIFIC EXAMPLE 4

FIG. 10B is a plan view of a light-emitting panel, and FIG. 10D is anexample of a cross-sectional view taken along dashed-dotted line B7-B8in FIG. 10B. The light-emitting panel described in Specific Example 4 isa bottom-emission light-emitting panel using a color filter method.Here, the difference from Specific Examples 1 to 3 is described indetail, and description of the same points is omitted.

The light-emitting panel illustrated in FIG. 10D includes the substrate801, the adhesive layer 811, the insulating layer 813, the plurality oftransistors, the terminal 110 (the conductive layer 110 a and theconductive layer 110 b), the insulating layer 815, the coloring layer845, an insulating layer 817 a, an insulating layer 817 b, a conductivelayer 816, the plurality of light-emitting elements 830, the insulatinglayer 821, the bonding layer 121, the substrate 803, and the protectivelayer 120. The substrate 801, the adhesive layer 811, the insulatinglayer 813, the insulating layer 815, the insulating layer 817 a, and theinsulating layer 817 b transmit visible light.

FIG. 10D shows the case where the light-emitting portion 804 includesthe transistor 820 and a transistor 822. The upper electrode 835preferably reflects visible light. The lower electrode 831 transmitsvisible light. The coloring layer 845 that overlaps with thelight-emitting element 830 can be provided anywhere; for example, thecoloring layer 845 may be provided between the insulating layers 817 aand 817 b or between the insulating layers 815 and 817 a.

In FIG. 10D, two of the transistors included in the driver circuitportion 806 are illustrated.

In this example, the conductive layer 110 b is formed using the samematerial and the same step(s) as those of the conductive layer 816. InFIG. 10D, the conductive layer 816 is drawn out in a region not coveredwith the substrate 803, and part thereof functions as the conductivelayer 110 b. As shown in FIG. 10D, the portion of the conductive layer816, which is not covered with the conductive layer 110 a may be coveredwith the protective layer 120.

The light-emitting panel in Specific Example 4 can be manufactured inthe following manner: the insulating layer 813, the transistor 820, thelight-emitting element 830, and the like are formed over a formationsubstrate with high heat resistance; the formation substrate isseparated; and the insulating layer 813, the transistor 820, thelight-emitting element 830, and the like are transferred to thesubstrate 801 and attached thereto with the adhesive layer 811. Atransistor and the like can be formed over the formation substrate withhigh heat resistance; thus, a highly reliable transistor and a film withsufficiently low water permeability can be formed at high temperatures.Then, the transistor and the film are transferred to the substrate 801,whereby a highly reliable light-emitting panel can be manufactured.Thus, according to one embodiment of the present invention, a thinand/or lightweight and highly reliable light-emitting panel can beprovided.

The protective layer 120 is provided to cover the exposed portion of thelight-emitting panel. Specifically, the protective layer 120 is providedto partially or entirely cover the exposed portions of the substrate803, the bonding layer 121, the insulating layer 817 b, the insulatinglayer 817 a, the conductive layer 816, the insulating layer 815, theinsulating layer 813, the adhesive layer 811, the substrate 801, and thelike.

As shown in FIG. 11, the protective layer 130 which covers thelight-emitting element 830 may be provided. The protective layer 130 hasan opening in a position overlapping with the terminal 110. By theprotective layer 130, impurities such as water can be prevented fromdiffusing into the light-emitting element 830 and the like through thebonding layer 121. As shown in FIG. 11, with the structure includingboth the protective layer 130 and the protective layer 120, diffusion ofimpurities into the light-emitting element 830 and the like can besuppressed more effectively, whereby an extremely highly reliablefunctional light-emitting panel can be provided.

SPECIFIC EXAMPLE 5

FIG. 10E illustrates an example of a light-emitting panel that isdifferent from those in Specific Examples 1 to 4. Here, the differencefrom Specific Examples 1 to 4 is described in detail, and description ofthe same points is omitted

The light-emitting panel illustrated in FIG. 10E includes the substrate801, the adhesive layer 811, the insulating layer 813, a conductivelayer 814, a conductive layer 857 a, a conductive layer 857 b, theterminal 110 (the conductive layer 110 a and the conductive layer 110b), the light-emitting element 830, the insulating layer 821, thebonding layer 121, and the substrate 803.

The conductive layer 857 a and the conductive layer 857 b are eachelectrically connected to the light-emitting element 830. Furthermore,part of the conductive layer 857 a and part of the conductive layer 857b each function as the conductive layer 110 b that is part of theterminal 110. The conductive layer 110 a is provided over the conductivelayer 110 b, which are included in the terminal 110. The terminal 110serves as an external connection electrode of the light-emitting panel,which can be electrically connected to an FPC or the like.

The light-emitting element 830 includes the lower electrode 831, the ELlayer 833, and the upper electrode 835. An end portion of the lowerelectrode 831 is covered with the insulating layer 821. Thelight-emitting element 830 is a bottom-emission, top-emission, ordual-emission light-emitting element. An electrode, a substrate, aninsulating layer, and the like on the light extraction side transmitvisible light. The conductive layer 814 is electrically connected to thelower electrode 831.

The substrate through which light is extracted may have, as a lightextraction structure, a hemispherical lens, a micro lens array, a filmprovided with an uneven surface structure, a light diffusing film, orthe like. For example, the substrate with a light extraction structurecan be formed by attaching the above lens or film to a resin substratewith an adhesive or the like having substantially the same refractiveindex as the substrate or the lens or film.

The conductive layer 814 is preferably, though not necessarily, providedbecause voltage drop due to the resistance of the lower electrode 831can be inhibited. In addition, for a similar purpose, a conductive layerelectrically connected to the upper electrode 835 may be provided overthe insulating layer 821, the EL layer 833, the upper electrode 835, orthe like.

The conductive layer 814 can be a single layer or a stacked layer formedusing a material selected from copper, titanium, tantalum, tungsten,molybdenum, chromium, neodymium, scandium, nickel, and aluminum, analloy material containing any of these materials as its main component,and the like. The thickness of the conductive layer 814 can be, forexample, greater than or equal to 0.1 μm and less than or equal to 3 μm,preferably greater than or equal to 0.1 μm and less than or equal to 0.5μm.

When a paste (e.g., silver paste) is used as a material for theconductive layer electrically connected to the upper electrode 835,metal particles forming the conductive layer aggregate; therefore, thesurface of the conductive layer is rough and has many gaps. Thus, it isdifficult for the EL layer 833 to completely cover the conductive layer;accordingly, the upper electrode and the conductive layer are preferablyelectrically connected to each other easily.

The light-emitting panel in Specific Example 5 can be manufactured inthe following manner: the insulating layer 813, the light-emittingelement 830, and the like are formed over a formation substrate withhigh heat resistance; the formation substrate is separated; and theinsulating layer 813, the light-emitting element 830, and the like aretransferred to the substrate 801 and attached thereto with the adhesivelayer 811. A film with sufficiently low water permeability is formed athigh temperatures over the formation substrate having high heatresistance and transferred to the substrate 801, whereby a highlyreliable light-emitting panel can be manufactured. Thus, according toone embodiment of the present invention, a thin and/or lightweight andhighly reliable light-emitting panel can be provided.

The protective layer 120 is provided to cover the exposed portion of thelight-emitting panel. Specifically, the protective layer 120 is providedto partially or entirely cover the exposed portions of the substrate803, the bonding layer 121, the insulating layer 813, the adhesive layer811, the substrate 801, and the like. The protective layer 120 hasopenings overlapping with parts of the surfaces of the conductive layer110 a over the conductive layer 857 a and the conductive layer 857 b.

Note that although the case where the light-emitting element is used asa display element is described here, one embodiment of the presentinvention is not limited thereto.

For example, a display element such as a micro electro mechanicalsystems (MEMS) element or an electron-emissive element can be used inthe display device. Examples of MEMS display elements include a MEMSshutter display element, an optical interference type MEMS displayelement, and the like. A carbon nanotube may be used for the electronemitter. Alternatively, electronic paper may be used. As the electronicpaper, an element using a microcapsule method, an electrophoreticmethod, an electrowetting method, an Electronic Liquid Powder(registered trademark) method, or the like can be used.

[Examples of Materials]

Next, materials and the like that can be used for a light-emitting panelare described. Note that description of the components already describedin this specification is omitted in some cases.

For each of the substrates, a material such as glass, quartz, an organicresin, a metal, or an alloy can be used. The substrate on the side fromwhich light from the light-emitting element is extracted is formed usinga material which transmits the light.

It is particularly preferable to use a flexible substrate. For example,it is possible to use glass, a metal, or an alloy that is thin enough tohave flexibility, or an organic resin.

An organic resin, which has a smaller specific gravity than glass, ispreferably used for the flexible substrate, in which case thelight-emitting panel can be lighter in weight than that using glass.

A material with high toughness is preferably used for the substrates. Inthat case, a robust light-emitting panel with high impact resistance canbe provided. For example, when an organic resin substrate or a metal oralloy substrate with a small thickness is used, the light-emitting panelcan be lighter in weight and more robust than that using a glasssubstrate.

A metal material and an alloy material, which have high thermalconductivity, are preferred because they can easily conduct heat to thewhole substrate and accordingly can prevent a local temperature rise inthe light-emitting panel. The thickness of a substrate using a metalmaterial or an alloy material is preferably greater than or equal to 10μm and less than or equal to 200 μm, further preferably greater than orequal to 20 μm and less than or equal to 50 μm.

Examples of a material for the metal substrate or the alloy substrateinclude, but not limited to, a metal such as aluminum, copper, iron,titanium, or nickel; and an alloy containing one or more metals selectedfrom the metals. As the alloy, for example, an aluminum alloy orstainless steel can be favorably used.

Furthermore, when a material with high thermal emissivity is used forthe substrate, the surface temperature of the light-emitting panel canbe prevented from rising, leading to prevention of breakage or adecrease in reliability of the light-emitting panel. For example, thesubstrate may have a stacked-layer structure of a metal substrate and alayer with high thermal emissivity (e.g., the layer can be formed usinga metal oxide or a ceramic material).

Examples of such a material having flexibility and a light-transmittingproperty include polyester resins such as polyethylene terephthalate(PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, apolyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC)resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefinresin, a polystyrene resin, a polyamide imide resin, a polyvinylchloride resin, and a polytetrafluoroethylene (PTFE) resin. Inparticular, a material whose coefficient of thermal expansion is low ispreferred, and for example, a polyamide imide resin, a polyimide resin,or PET can be suitably used. A substrate in which a fibrous body isimpregnated with a resin (also referred to as prepreg) or a substratewhose coefficient of thermal expansion is reduced by mixing an organicresin with an inorganic filler can also be used.

The flexible substrate may have a stacked structure in which a hard coatlayer (such as a silicon nitride layer) by which a surface of alight-emitting device is protected from damage, a layer (such as anaramid resin layer) which can disperse pressure, or the like is stackedover a layer of any of the above-mentioned materials.

The flexible substrate may be formed by stacking a plurality of layers.When a glass layer is used, a barrier property against water and oxygencan be improved and thus a reliable light-emitting panel can beprovided.

A flexible substrate in which a glass layer, a bonding layer, and anorganic resin layer are stacked from the side closer to a light-emittingelement is preferably used. The thickness of the glass layer is greaterthan or equal to 20 μm and less than or equal to 200 μm, preferablygreater than or equal to 25 μm and less than or equal to 100 μm. Withsuch a thickness, the glass layer can have both a high barrier propertyagainst water and oxygen and high flexibility. The thickness of theorganic resin layer is greater than or equal to 10 μm and less than orequal to 200 μm, preferably greater than or equal to 20 μm and less thanor equal to 50 μm. Providing such an organic resin layer, occurrence ofa crack or a break in the glass layer can be suppressed and mechanicalstrength can be improved. With the substrate that includes such acomposite material of a glass material and an organic resin, a highlyreliable and flexible light-emitting panel can be provided.

As the adhesive layer or the bonding layer, various curable adhesivessuch as a reactive curable adhesive, a thermosetting adhesive, ananaerobic adhesive, and a photo curable adhesive such as an ultravioletcurable adhesive can be used. Examples of these adhesives include anepoxy resin, an acrylic resin, a silicone resin, a phenol resin, apolyimide resin, an imide resin, a polyvinyl chloride (PVC) resin, apolyvinyl butyral (PVB) resin, and an ethylene vinyl acetate (EVA)resin. In particular, a material with low moisture permeability, such asan epoxy resin, is preferred. Alternatively, atwo-component-mixture-type resin may be used. Further alternatively, anadhesive sheet or the like may be used.

Further, the resin may include a drying agent. For example, a substancethat adsorbs water by chemical adsorption, such as oxide of an alkalineearth metal (e.g., calcium oxide or barium oxide), can be used.Alternatively, a substance that adsorbs water by physical adsorption,such as zeolite or silica gel, may be used. The drying agent ispreferably included because it can prevent impurities such as water fromentering the functional element, thereby improving the reliability ofthe light-emitting panel.

In addition, it is preferable to mix a filler with a high refractiveindex or light-scattering member into the resin, in which case lightextraction efficiency from the light-emitting element can be enhanced.For example, titanium oxide, barium oxide, zeolite, zirconium, or thelike can be used.

The structure of the transistors in the light-emitting panel is notparticularly limited. For example, a forward staggered transistor or aninverted staggered transistor may be used. A top-gate transistor or abottom-gate transistor may be used. There is no particular limitation ona semiconductor material used for the transistors; for example, silicon,germanium, silicon carbide, or gallium nitride can be used.Alternatively, an oxide semiconductor containing at least one of indium,gallium, and zinc, such as an In—Ga—Zn-based metal oxide, may be used.

There is no particular limitation on the crystallinity of asemiconductor material used for the transistors, and an amorphoussemiconductor or a semiconductor having crystallinity (amicrocrystalline semiconductor, a polycrystalline semiconductor, asingle-crystal semiconductor, or a semiconductor partly includingcrystal regions) may be used. It is preferable that a semiconductorhaving crystallinity be used, in which case deterioration of thetransistor characteristics can be suppressed.

Here, an oxide semiconductor is preferably used for semiconductordevices such as transistors used for pixels, driver circuits, touchsensors described later, and the like. In particular, an oxidesemiconductor having a wider band gap than silicon is preferably used. Asemiconductor material having a wider band gap and a lower carrierdensity than silicon is preferably used because off-state leakagecurrent of the transistor can be reduced.

For example, the oxide semiconductor preferably contains at least indium(In) or zinc (Zn). More preferably, the oxide semiconductor contains anIn-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La,Ce, or Hf).

As the semiconductor layer, it is particularly preferable to use anoxide semiconductor film including a plurality of crystal parts whosec-axes are aligned perpendicular to a surface on which the semiconductorlayer is formed or the top surface of the semiconductor layer and inwhich a grain boundary is not observed between adjacent crystal parts.

There is no grain boundary in such an oxide semiconductor; therefore,generation of a crack in an oxide semiconductor film which is caused bystress when a display panel is bent is prevented. Therefore, such anoxide semiconductor can be preferably used for a flexible display panelwhich is used in a bent state, or the like.

Moreover, the use of such an oxide semiconductor with crystallinity forthe semiconductor layer makes it possible to provide a highly reliabletransistor in which a change in the electrical characteristics issuppressed.

A transistor with an oxide semiconductor whose band gap is larger thanthe band gap of silicon can hold charges stored in a capacitor that isseries-connected to the transistor for a long time, owing to the lowoff-state current of the transistor. When such a transistor is used fora pixel, operation of a driver circuit can be stopped while a gray scaleof an image displayed in each display region is maintained. As a result,an electronic device with an extremely low power consumption can beobtained.

For stable characteristics of the transistor, a base film is preferablyprovided. The base film can be formed with an inorganic insulating filmsuch as a silicon oxide film, a silicon nitride film, a siliconoxynitride film, or a silicon nitride oxide film to have a single-layerstructure or a stacked-layer structure. The base film can be formed by asputtering method, a chemical vapor deposition (CVD) method (e.g., aplasma CVD method, a thermal CVD method, or a metal organic CVD (MOCVD)method), an atomic layer deposition (ALD) method, a coating method, aprinting method, or the like. Note that the base film is not necessarilyprovided if not necessary. In each of the above Structure Examples, theinsulating layer 813 can serve as a base film of the transistor.

As the light-emitting element, a self-luminous element can be used, andan element whose luminance is controlled by current or voltage isincluded in the category of the light-emitting element. For example, alight-emitting diode (LED), an organic EL element, an inorganic ELelement, or the like can be used.

The light-emitting element may be a top emission, bottom emission, ordual emission light-emitting element. A conductive film that transmitsvisible light is used as the electrode through which light is extracted.A conductive film that reflects visible light is preferably used as theelectrode through which light is not extracted.

The conductive film that transmits visible light can be formed using,for example, indium oxide, indium tin oxide, indium zinc oxide, zincoxide, or zinc oxide to which gallium is added. Alternatively, a film ofa metal material such as gold, silver, platinum, magnesium, nickel,tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, ortitanium; an alloy containing any of these metal materials; or a nitrideof any of these metal materials (e.g., titanium nitride) can be formedthin so as to have a light-transmitting property. Alternatively, a stackof any of the above materials can be used as the conductive layer. Forexample, a stack of an alloy of silver and magnesium and indium tinoxide is preferably used because the conductivity can be increased.Further alternatively, graphene or the like may be used.

For the conductive film that reflects visible light, for example, ametal material, such as aluminum, gold, platinum, silver, nickel,tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium or analloy including any of these metal materials can be used. Lanthanum,neodymium, germanium, or the like may be added to the metal material orthe alloy. Alternatively, an alloy containing aluminum (an aluminumalloy) such as an alloy of aluminum and titanium, an alloy of aluminumand nickel, or an alloy of aluminum and neodymium may be used.Alternatively, an alloy containing silver such as an alloy of silver andcopper, an alloy of silver and palladium, or an alloy of silver andmagnesium may be used. An alloy of silver and copper is preferablebecause of its high heat resistance. Furthermore, when a metal film or ametal oxide film is stacked in contact with an aluminum film or analuminum alloy film, oxidation can be prevented. Examples of a materialfor the metal film or the metal oxide film are titanium, titanium oxide,and the like. Alternatively, the conductive film having a property oftransmitting visible light and a film containing any of the above metalmaterials may be stacked. For example, a stack of silver and indium tinoxide, a stack of an alloy of silver and magnesium and indium tin oxide,or the like can be used.

The electrodes may be formed separately by an evaporation method or asputtering method. Alternatively, a discharging method such as an inkjetmethod, a printing method such as a screen printing method, or a platingmethod may be used.

When a voltage higher than the threshold voltage of the light-emittingelement is applied between the lower electrode 831 and the upperelectrode 835, holes are injected to the EL layer 833 from the anodeside and electrons are injected to the EL layer 833 from the cathodeside. The injected electrons and holes are recombined in the EL layer833 and a light-emitting substance contained in the EL layer 833 emitslight.

The EL layer 833 includes at least a light-emitting layer. In additionto the light-emitting layer, the EL layer 833 may further include one ormore layers containing any of a substance with a high hole-injectionproperty, a substance with a high hole-transport property, ahole-blocking material, a substance with a high electron-transportproperty, a substance with a high electron-injection property, asubstance with a bipolar property (a substance with a high electron- andhole-transport property), and the like.

For the EL layer 833, either a low molecular compound or a highmolecular compound can be used, and an inorganic compound may also beused. The above-described layers included in the EL layer 833 can beformed separately by any of the following methods: an evaporation method(including a vacuum evaporation method), a transfer method, a printingmethod, an inkjet method, a coating method, and the like.

In the case where a light-emitting element emitting white light is usedas the light-emitting element 830, the EL layer 833 preferably containstwo or more kinds of light-emitting substances. For example,light-emitting substances are selected so that two or morelight-emitting substances emit complementary colors to obtain whitelight emission. Specifically, it is preferable to contain two or morelight-emitting substances selected from light-emitting substancesemitting light of red (R), green (G), blue (B), yellow (Y), orange (O),and the like and light-emitting substances emitting light containing twoor more of spectral components of R, G, and B. The light-emittingelement 830 preferably emits light with a spectrum having two or morepeaks in the wavelength range of a visible light region (e.g., 350 nm to750 nm). An emission spectrum of a material emitting light having a peakin the wavelength range of a yellow light preferably includes spectralcomponents also in the wavelength range of a green light and a redlight.

A light-emitting layer containing a light-emitting material emittinglight of one color and a light-emitting layer containing alight-emitting material emitting light of another color are preferablystacked in the EL layer 833. For example, the plurality oflight-emitting layers in the EL layer 833 may be stacked in contact witheach other or may be stacked with a region not including anylight-emitting material therebetween. For example, between a fluorescentlayer and a phosphorescent layer, a region containing the same materialas one in the fluorescent layer or phosphorescent layer (for example, ahost material or an assist material) and no light-emitting element maybe provided. This facilitates the manufacture of the light-emittingelement and reduces the drive voltage.

The light-emitting element 830 may be a single element including one ELlayer or a tandem element in which a plurality of EL layers are stackedwith a charge generation layer therebetween.

The light-emitting element is preferably provided between a pair ofinsulating films with low water permeability. Thus, an impurity such aswater can be prevented from entering the light-emitting element, leadingto prevention of a decrease in the reliability of the light-emittingdevice.

As an insulating film with low water permeability, a film containingnitrogen and silicon (e.g., a silicon nitride film or a silicon nitrideoxide film), a film containing nitrogen and aluminum (e.g., an aluminumnitride film), or the like can be used. Alternatively, a silicon oxidefilm, a silicon oxynitride film, an aluminum oxide film, or the like canbe used.

For example, the moisture vapor transmission rate of the insulating filmwith low water permeability is lower than or equal to 1×10⁻⁵[g/(m²·day)], preferably lower than or equal to 1×10⁻⁶ [g/(m²·day)],further preferably lower than or equal to 1×10⁻⁷ [g/(m²·day)], stillfurther preferably lower than or equal to 1×10⁻⁸ [g/(m²·day)].

The insulating layers 813 and 843 are each preferably formed using aninsulating film with low water permeability.

As the insulating layer 815, for example, an inorganic insulating filmsuch as a silicon oxide film, a silicon oxynitride film, or an aluminumoxide film can be used. For example, as each of the insulating layers817, 817 a, and 817 b, an organic material such as polyimide, acrylic,polyamide, polyimide amide, or a benzocyclobutene-based resin can beused. Alternatively, a low-dielectric constant material (a low-kmaterial) or the like can be used. Furthermore, each of the insulatinglayers may be formed by stacking a plurality of insulating films.

The insulating layer 821 is formed using an organic insulating materialor an inorganic insulating material. As a resin, for example, apolyimide resin, a polyamide resin, an acrylic resin, a siloxane resin,an epoxy resin, or a phenol resin can be used. It is particularlypreferable that the insulating layer 821 be formed to have an inclinedside wall with curvature, using a photosensitive resin material.

There is no particular limitation on the method for forming theinsulating layer 821; a photolithography method, a sputtering method, anevaporation method, a droplet discharging method (e.g., an ink-jetmethod), a printing method (e.g., a screen printing method or an off-setprinting method), or the like may be used.

The spacer 827 can be formed using an inorganic insulating material, anorganic insulating material, a metal material, or the like. As theinorganic insulating material and the organic insulating material, forexample, a variety of materials that can be used for the insulatinglayer can be used. As the metal material, titanium, aluminum, or thelike can be used. When the spacer 827 containing a conductive materialand the upper electrode 835 are electrically connected to each other, apotential drop due to the resistance of the upper electrode 835 can besuppressed. The spacer 827 may have either a tapered shape or an inversetapered shape.

A conductive layer included in the light-emitting panel, which functionsas an electrode or a wiring of the transistor, an auxiliary electrode ofthe light-emitting element, or the like, can be formed to have asingle-layer structure or a stacked-layer structure using any of metalmaterials such as molybdenum, titanium, chromium, tantalum, tungsten,aluminum, copper, neodymium, and scandium, and an alloy materialcontaining any of these elements, for example. Alternatively, theconductive layer may be formed using a conductive metal oxide. Theconductive layer may be formed using a conductive metal oxide such asindium oxide (e.g., In₂O₃), tin oxide (e.g., SnO₂), zinc oxide (ZnO),indium tin oxide, indium zinc oxide (e.g., In₂O₃—ZnO), or any of thesemetal oxide materials containing silicon oxide.

The coloring layer is a colored layer that transmits light in a specificwavelength range. For example, a red (R) color filter for transmittinglight in a red wavelength range, a green (G) color filter fortransmitting light in a green wavelength range, a blue (B) color filterfor transmitting light in a blue wavelength range, or the like can beused. Each coloring layer is formed in a desired position with any ofvarious materials by a printing method, an inkjet method, an etchingmethod using a photolithography method, or the like.

The light-blocking layer is provided between the adjacent coloringlayers. The light-blocking layer blocks light emitted from an adjacentlight-emitting element to prevent color mixture between adjacentlight-emitting elements. Here, the coloring layer is provided such thatits end portion overlaps with the light-blocking layer, whereby lightleakage can be reduced. As the light-blocking layer, a material that canblock light from the light-emitting element can be used; for example, ablack matrix may be formed using a resin material containing a metalmaterial, pigment, or dye. Note that it is preferable to provide thelight-blocking layer in a region other than the light-emitting portion,such as a driver circuit portion, in which case undesired leakage ofguided light or the like can be suppressed.

Furthermore, an overcoat covering the coloring layer and thelight-blocking layer may be provided. The overcoat can prevent animpurity and the like contained in the coloring layer from beingdiffused into the light-emitting element. The overcoat is formed with amaterial that transmits light emitted from the light-emitting element;for example, an inorganic insulating film such as a silicon nitride filmor a silicon oxide film, an organic insulating film such as an acrylicfilm or a polyimide film can be used, and further, a stacked structureof an organic insulating film and an inorganic insulating film may beemployed.

In the case where upper surfaces of the coloring layer and thelight-blocking layer are coated with a material of the bonding layer, amaterial which has high wettability with respect to the material of thebonding layer is preferably used as the material of the overcoat. Forexample, an oxide conductive film such as an indium tin oxide film or ametal film such as an Ag film which is thin enough to transmit visiblelight is preferably used as the overcoat.

For the connector, it is possible to use a paste-like or sheet-likematerial which is obtained by mixing metal particles into athermosetting resin and for which anisotropic electric conductivity isprovided by thermocompression bonding. As the metal particles, particlesin which two or more kinds of metals are layered, for example, nickelparticles coated with gold are preferably used. Alternatively, aparticulate resin whose surface is coated with a metal is preferablyused.

[Example of Manufacturing Method]

Next, an example of a method for manufacturing a light-emitting panel isdescribed with reference to FIGS. 12A to 12C and FIGS. 13A to 13C. Here,the manufacturing method is described using the light-emitting panel ofSpecific Example 1 (FIG. 6C) as an example.

First, a separation layer 203 is formed over a formation substrate 201,and the insulating layer 813 is formed over the separation layer 203.Next, the plurality of transistors, the terminal 110 (the conductivelayer 110 a and the conductive layer 110 b), the insulating layer 815,the insulating layer 817, the plurality of light-emitting elements, andthe insulating layer 821 are formed over the insulating layer 813. Anopening is formed in the insulating layers 821, 817, and 815 to exposethe conductive layer 110 b and the conductive layer 110 a is formed soas to fill the opening (FIG. 12A).

In addition, a separation layer 207 is formed over a formation substrate205, and the insulating layer 843 is formed over the separation layer207. Next, the light-blocking layer 847, the coloring layer 845, and theovercoat 849 are formed over the insulating layer 843 (FIG. 12B).

The formation substrate 201 and the formation substrate 205 each can bea glass substrate, a quartz substrate, a sapphire substrate, a ceramicsubstrate, a metal substrate, or the like.

For the glass substrate, for example, a glass material such asaluminosilicate glass, aluminoborosilicate glass, or barium borosilicateglass can be used. When the temperature of the heat treatment performedlater is high, a substrate having a strain point of 730° C. or higher ispreferably used as the glass substrate. Note that by containing a largeamount of barium oxide (BaO), a glass substrate which is heat-resistantand more practical can be obtained. Alternatively, crystallized glass orthe like may be used.

In the case where a glass substrate is used as the formation substrate,an insulating film such as a silicon oxide film, a silicon oxynitridefilm, a silicon nitride film, or a silicon nitride oxide film ispreferably formed between the formation substrate and the separationlayer, in which case contamination from the glass substrate can beprevented.

The separation layer 203 and the separation layer 207 each have asingle-layer structure or a stacked-layer structure containing anelement selected from tungsten, molybdenum, titanium, tantalum, niobium,nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium,iridium, and silicon; an alloy material containing any of the elements;or a compound material containing any of the elements. A crystalstructure of a layer containing silicon may be amorphous, microcrystal,or polycrystal.

The separation layer can be formed by a sputtering method, a plasma CVDmethod, a coating method, a printing method, or the like. Note that acoating method includes a spin coating method, a droplet dischargemethod, and a dispensing method.

In the case where the separation layer has a single-layer structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is preferably formed. Alternatively, a layercontaining an oxide or an oxynitride of tungsten, a layer containing anoxide or an oxynitride of molybdenum, or a layer containing an oxide oran oxynitride of a mixture of tungsten and molybdenum may be formed. Itis to be noted that a mixture of tungsten and molybdenum is an alloy oftungsten and molybdenum, for example.

In the case where the separation layer is formed to have a stacked-layerstructure including a layer containing tungsten and a layer containingan oxide of tungsten, the layer containing an oxide of tungsten may beformed as follows: the layer containing tungsten is formed first and aninsulating film formed of an oxide is formed thereover, so that thelayer containing an oxide of tungsten is formed at the interface betweenthe tungsten layer and the insulating film. Alternatively, the layercontaining an oxide of tungsten may be formed by performing thermaloxidation treatment, oxygen plasma treatment, nitrous oxide (N₂O) plasmatreatment, treatment with a highly oxidizing solution such as ozonewater, or the like on the surface of the layer containing tungsten.Plasma treatment or heat treatment may be performed in an atmosphere ofoxygen, nitrogen, or nitrous oxide alone, or a mixed gas of any of thesegasses and another gas. Surface condition of the separation layer ischanged by the plasma treatment or heat treatment, whereby adhesionbetween the separation layer and the insulating film formed later can becontrolled.

Each of the insulating layers can be formed by a sputtering method, aplasma CVD method, a coating method, a printing method, or the like. Forexample, the insulating layer is formed at a temperature of higher thanor equal to 250° C. and lower than or equal to 400° C. by a plasma CVDmethod, whereby the insulating layer can be a dense film with very lowwater permeability.

Then, a material for the bonding layer 121 is applied to a surface ofthe formation substrate 205 over which the coloring layer 845 and thelike are formed or a surface of the formation substrate 201 over whichthe light-emitting element 230 and the like are formed, and theformation substrate 201 and the formation substrate 205 are attached sothat these two surfaces face each other with the bonding layer 121provided therebetween (FIG. 12C).

Next, the formation substrate 201 is separated, and the exposedinsulating layer 813 and the substrate 801 are attached to each otherwith the adhesive layer 811. Furthermore, the formation substrate 205 isseparated, and the exposed insulating layer 843 and the substrate 803are attached to each other with the adhesive layer 841. Although thesubstrate 803 does not overlap with the terminal 110 in FIG. 13A, thesubstrate 803 may overlap with the terminal 110.

Any of a variety of methods can be used as appropriate for theseparation process. For example, when a layer including a metal oxidefilm is formed as the separation layer on the side in contact with thelayer to be separated, the metal oxide film is embrittled bycrystallization, whereby the layer to be separated can be separated fromthe formation substrate. Alternatively, when an amorphous silicon filmcontaining hydrogen is formed as the separation layer between aformation substrate having high heat resistance and a layer to beseparated, the amorphous silicon film is removed by laser irradiation oretching, whereby the layer to be separated can be separated from theformation substrate. Alternatively, after a layer including a metaloxide film is formed as the separation layer on the side in contact withthe layer to be separated, the metal oxide film is embrittled bycrystallization, and part of the separation layer is removed by etchingusing a solution or a fluoride gas such as NF₃, BrF₃, or ClF₃, wherebythe separation can be performed at the embrittled metal oxide film.Further alternatively, a method carried out as follows may be employed:a film containing nitrogen, oxygen, hydrogen, or the like (e.g., anamorphous silicon film containing hydrogen, an alloy film containinghydrogen, or an alloy film containing oxygen) is used as the separationlayer, and the separation layer is irradiated with laser to release thenitrogen, oxygen, or hydrogen contained in the separation layer as gas,thereby promoting separation between the layer to be separated and theformation substrate. Still further alternatively, it is possible to usea method in which the formation substrate provided with the layer to beseparated is removed mechanically or by etching using a solution or afluoride gas such as NF₃, BrF₃, or ClF₃, or the like. In this case, theseparation layer is not necessarily provided.

When a plurality of the above-described separation methods are combined,the separation process can be performed easily. In other words,separation can be performed with physical force (by a machine or thelike) after performing laser irradiation, etching on the separationlayer with a gas, a solution, or the like, or mechanical removal with asharp knife, scalpel or the like so that the separation layer and thelayer to be separated can be easily separated from each other.

Separation of the layer to be separated from the formation substrate maybe performed by soaking the interface between the separation layer andthe layer to be separated in a liquid. Furthermore, the separation maybe performed while a liquid such as water is being poured.

As another separation method, in the case where the separation layer isformed using tungsten, it is preferable that the separation be performedwhile etching the separation layer using a mixed solution of ammoniumwater and a hydrogen peroxide solution.

Note that the separation layer is not necessarily provided in the casewhere separation at an interface between the formation substrate and thelayer to be separated is possible. For example, glass is used as theformation substrate, an organic resin such as polyimide, polyester,polyolefin, polyamide, polycarbonate, or acrylic is formed in contactwith the glass, and an insulating film, a transistor, and the like areformed over the organic resin. In this case, heating the organic resinenables the separation at the interface between the formation substrateand the organic resin. Alternatively, separation at the interfacebetween a metal layer and the organic resin may be performed in thefollowing manner: the metal layer is provided between the formationsubstrate and the organic resin and current is made to flow in the metallayer so that the metal layer is heated.

Lastly, an opening is formed in the insulating layer 843 and the bondinglayer 121 to expose the terminal 110 (FIG. 13B). In the case where thesubstrate 803 overlaps with the terminal 110, an opening is formed alsoin the substrate 803 and the adhesive layer 841 so that the terminal 110is exposed (FIG. 13C). There is no particular limitation on the methodfor forming the opening. For example, a laser ablation method, anetching method, an ion beam sputtering method, or the like may be used.As another method, a cut may be made in a film over the terminal 110with a sharp knife or the like and part of the film may be separated byphysical force.

Although an example in which the opening is formed after the formationof the insulating layer 843 and the bonding layer 121 is described, theinsulating layer 843 and the bonding layer 121 can be prevented frombeing provided in advance in a portion to be the opening. Alternatively,the opening may be formed in such a manner that an adhesive tape isattached to a portion overlapping with the terminal 110 in advance andthen peeled.

After that, the protective layer 120 is formed. By an ALD method, theprotective layer 120 that is dense and uniform can be formed to coverthe surface of the light-emitting panel. Examples of an apparatus thatcan be used for the film formation of the protective layer 120 aredescribed later.

A deposition method such as a sputtering method or a CVD method, or acoating method using a liquid material, such as a spin coating method ora dipping method may be used for the protective layer 120.

The portion in which the protective layer 120 is not provided issubjected to masking treatment in advance, and the mask is removed afterthe formation of the protective layer 120, whereby the opening can beprovided in the protective layer 120. As a material for the masking, amaterial that is easily removed in a later step, has heat resistance tothe temperature at the deposition of the protective layer 120, and isstable to the deposition gas (or deposition liquid) is used. Forexample, an adhesive tape including polyimide or the like is preferablyused.

Since the conductive layer 110 a that is not easily oxidized is formedon the surface of the terminal 110, when the protective layer 120 isformed by an ALD method or the like, the portion in which the protectivelayer 120 is not formed is formed over the conductive layer 110 a in aself-aligned manner without performing the above masking treatment.

In the above-described manner, the light-emitting panel can bemanufactured.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

Embodiment 3

In this embodiment, structure examples of a foldable touch panel that isapplicable to a display panel included in the display device of oneembodiment of the present invention will be described with reference toFIGS. 14A to 14C, FIGS. 15A and 15B, FIGS. 16A to 16C, FIG. 17, andFIGS. 18A to 18C. Note that for a material of each layer, refer toEmbodiment 2.

Structure Example 1

FIG. 14A is a top view of the touch panel 390. FIG. 14B is across-sectional view taken along dashed-dotted line A-B anddashed-dotted line C-D in FIG. 14A. FIG. 14C is a cross-sectional viewtaken along dashed-dotted line E-F in FIG. 14A.

As illustrated in FIG. 14A, the touch panel 390 includes a displayportion 301.

The display portion 301 includes a plurality of pixels 302 and aplurality of imaging pixels 308. The imaging pixels 308 can sense atouch of a finger or the like on the display portion 301. Thus, a touchsensor can be formed using the imaging pixels 308.

Each of the pixels 302 includes a plurality of sub-pixels (e.g., asub-pixel 302R). In addition, in the sub-pixels, light-emitting elementsand pixel circuits that can supply electric power for driving thelight-emitting elements are provided.

The pixel circuits are electrically connected to wirings through whichselection signals are supplied and wirings through which image signalsare supplied.

Furthermore, the touch panel 390 is provided with a scan line drivercircuit 303 g(1) that can supply selection signals to the pixels 302 andan image signal line driver circuit 303 s(1) that can supply imagesignals to the pixels 302.

The imaging pixels 308 include photoelectric conversion elements andimaging pixel circuits that drive the photoelectric conversion elements.

The imaging pixel circuits are electrically connected to wirings throughwhich control signals are supplied and wirings through which powersupply potentials are supplied.

Examples of the control signal include a signal for selecting an imagingpixel circuit from which a recorded imaging signal is read, a signal forinitializing an imaging pixel circuit, a signal for determining the timeit takes for an imaging pixel circuit to sense light, and the like.

The touch panel 390 is provided with an imaging pixel driver circuit 303g(2) that can supply control signals to the imaging pixels 308 and animaging signal line driver circuit 303 s(2) that reads out imagingsignals.

The touch panel 390 includes a substrate 510 and a substrate 570 facingthe substrate 510 as illustrated in FIG. 14B.

Flexible materials can be favorably used for the substrate 510 and thesubstrate 570.

Materials with which passage of impurities is inhibited can be favorablyused for the substrate 510 and the substrate 570. For example, materialswith a vapor permeability of lower than or equal to 10⁻⁵ [g/m²·day],preferably lower than or equal to 10⁻⁶ [g/m²·day] can be favorably used.

The substrate 510 can be favorably formed using a material whosecoefficient of linear expansion is substantially equal to that of thesubstrate 570. For example, the coefficient of linear expansion of thematerials are preferably lower than or equal to 1×10⁻³/K, furtherpreferably lower than or equal to 5×10⁻⁵/K, and still further preferablylower than or equal to 1×10⁻⁵/K.

The substrate 510 is a stacked body including a flexible substrate 510b, an insulating layer 510 a that prevents diffusion of impurities tothe light-emitting elements, and an adhesive layer 510 c that bonds theinsulating layer 510 a to the flexible substrate 510 b.

The substrate 570 is a stacked body including a flexible substrate 570b, an insulating layer 570 a that prevents diffusion of impurities tothe light-emitting elements, and an adhesive layer 570 c that bonds theinsulating layer 570 a to the flexible substrate 570 b.

For example, a material including polyester, polyolefin, polyamide(e.g., nylon, aramid), polyimide, polycarbonate, polyurethane, anacrylic resin, an epoxy resin, or a resin including a siloxane bond canbe used for the adhesive layer.

The bonding layer 121 bonds the substrate 570 to the substrate 510. Thebonding layer 121 has a refractive index higher than that of air. In thecase where light is extracted through the bonding layer 121, the bondinglayer 121 also serves as a layer (hereinafter, also referred to as anoptical bonding layer) that optically bonds two components (here, thesubstrates 510 and 570) between which the bonding layer 121 issandwiched. The pixel circuits and the light-emitting elements (e.g., afirst light-emitting element 350R) are provided between the substrate510 and the substrate 570.

Each of the pixels 302 includes the sub-pixel 302R, a sub-pixel 302G,and a sub-pixel 302B (FIG. 14C). The sub-pixel 302R includes alight-emitting module 380R, the sub-pixel 302G includes a light-emittingmodule 380G, and the sub-pixel 302B includes a light-emitting module380B.

For example, the sub-pixel 302R includes the first light-emittingelement 350R and the pixel circuit that can supply electric power to thefirst light-emitting element 350R and includes a transistor 302 t (FIG.14B). Furthermore, the light-emitting module 380R includes the firstlight-emitting element 350R and an optical element (e.g., a coloringlayer 367R).

The first light-emitting element 350R includes a first lower electrode351R, an upper electrode 352, and an EL layer 353 between the firstlower electrode 351R and the upper electrode 352 (FIG. 14C).

The EL layer 353 includes a first EL layer 353 a, a second EL layer 353b, and an intermediate layer 354 between the first EL layer 353 a andthe second EL layer 353 b.

The light-emitting module 380R includes the first coloring layer 367R onthe substrate 570. The coloring layer transmits light of a particularwavelength and is, for example, a layer that selectively transmits lightof red, green, or blue color. Note that a region that transmits lightemitted from the light-emitting element as it is may be provided aswell.

The light-emitting module 380R, for example, includes the bonding layer121 that is in contact with the first light-emitting element 350R andthe first coloring layer 367R.

The first coloring layer 367R is positioned in a region overlapping withthe first light-emitting element 350R. Accordingly, part of lightemitted from the first light-emitting element 350R passes through thebonding layer 121 that also serves as an optical bonding layer andthrough the first coloring layer 367R and is emitted to the outside ofthe light-emitting module 380R as indicated by arrows in FIGS. 14B and14C.

The touch panel 390 includes a light-blocking layer 367BM on thesubstrate 570. The light-blocking layer 367BM is provided to surroundthe coloring layer (e.g., the first coloring layer 367R).

The touch panel 390 includes an anti-reflective layer 367 p positionedin a region overlapping with the display portion 301. As theanti-reflective layer 367 p, a circular polarizing plate can be used,for example.

The touch panel 390 includes an insulating layer 321. The insulatinglayer 321 covers the transistor 302 t. Note that the insulating layer321 can be used as a layer for planarizing unevenness caused by thepixel circuits. An insulating film on which a layer that can preventdiffusion of impurities to the transistor 302 t and the like is stackedcan be used as the insulating layer 321.

The touch panel 390 includes the light-emitting elements (e.g., thefirst light-emitting element 350R) over the insulating layer 321.

The touch panel 390 includes, over the insulating layer 321, a partition328 that overlaps with an end portion of the first lower electrode 351R.In addition, a spacer 329 that controls the distance between thesubstrate 510 and the substrate 570 is provided on the partition 328.

The image signal line driver circuit 303 s(1) includes a transistor 303t and a capacitor 303 c. Note that the driver circuit and the pixelcircuits can be formed in the same process over the same substrate. Asillustrated in FIG. 14B, the transistor 303 t may include a second gate304 over the insulating layer 321. The second gate 304 may beelectrically connected to a gate of the transistor 303 t. Alternatively,different potentials may be supplied to the second gate 304 and the gateof the transistor 303 t. The second gate 304 may be provided in atransistor 308 t, the transistor 302 t, or the like if necessary.

The imaging pixels 308 each include a photoelectric conversion element308 p and an imaging pixel circuit for sensing light received by thephotoelectric conversion element 308 p. The imaging pixel circuitincludes the transistor 308 t.

For example, a PIN photodiode can be used as the photoelectricconversion element 308 p.

The touch panel 390 includes a wiring 311 through which a signal can besupplied. The wiring 311 is provided with the terminal 110. Note that anFPC 309(1) through which a signal such as an image signal or asynchronization signal can be supplied is electrically connected to theterminal 110. Note that a printed wiring board (PWB) may be attached tothe FPC 309(1).

The terminal 110 has a stacked structure including the conductive layer110 b over the wiring 311 and the conductive layer 110 a over theconductive layer 110 b.

The protective layer 120 is provided to cover an exposed portion of thetouch panel. Specifically, the protective layer 120 is provided topartially or entirely cover exposed portions of the substrate 570 (theflexible substrate 570 b, the adhesive layer 570 c, and the insulatinglayer 570 a), the bonding layer 121, the substrate 510 (the flexiblesubstrate 510 b, the adhesive layer 510 c, and the insulating layer 510a), and the like. The protective layer 120 has an opening overlappingwith part of the surface of the terminal 110.

Transistors formed in the same process can be used as the transistor 302t, the transistor 303 t, the transistor 308 t, and the like. Embodiment2 can be referred to for the structures of the transistors.

As a gate, source, and drain of a transistor, and a wiring or anelectrode included in a touch panel, a single-layer structure or astacked-layer structure using any of metals such as aluminum, titanium,chromium, nickel, copper, yttrium, zirconium, molybdenum, silver,tantalum, and tungsten, or an alloy containing any of these metals asits main component can be used. For example, a single-layer structure ofan aluminum film containing silicon, a two-layer structure in which analuminum film is stacked over a titanium film, a two-layer structure inwhich an aluminum film is stacked over a tungsten film, a two-layerstructure in which a copper film is stacked over acopper-magnesium-aluminum alloy film, a two-layer structure in which acopper film is stacked over a titanium film, a two-layer structure inwhich a copper film is stacked over a tungsten film, a three-layerstructure in which a titanium film or a titanium nitride film, analuminum film or a copper film, and a titanium film or a titaniumnitride film are stacked in this order, a three-layer structure in whicha molybdenum film or a molybdenum nitride film, an aluminum film or acopper film, and a molybdenum film or a molybdenum nitride film arestacked in this order, and the like can be given. Note that atransparent conductive material containing indium oxide, tin oxide, orzinc oxide may be used. Copper containing manganese is preferably usedbecause controllability of a shape by etching is increased.

Structure Example 2

FIGS. 15A and 15B are perspective views of a touch panel 505. Forsimplicity, only main components are illustrated. FIGS. 16A to 16C arecross-sectional views along dashed-dotted line X1-X2 in FIG. 15A.

The touch panel 505 includes a display portion 501 and a touch sensor595 (FIG. 15B). Furthermore, the touch panel 505 includes the substrate510, the substrate 570, and a substrate 590. Note that the substrate510, the substrate 570, and the substrate 590 each have flexibility.

The display portion 501 includes the substrate 510, a plurality ofpixels over the substrate 510, a plurality of wirings 511 through whichsignals are supplied to the pixels, and a driver circuit 503. Theplurality of wirings 511 is led to a peripheral portion of the substrate510, and part of the plurality of wirings 511 forms the terminal 110.The terminal 110 is electrically connected to an FPC 509(1).

The terminal 110 has a stacked structure including the conductive layer110 b over the wirings 511 and the conductive layer 110 a over theconductive layer 110 b.

The substrate 590 includes the touch sensor 595 and a plurality ofwirings 598 electrically connected to the touch sensor 595. Theplurality of wirings 598 is led to a peripheral portion of the substrate590, and part of the plurality of wirings 598 forms a terminal. Theterminal is electrically connected to an FPC 509(2). Note that in FIG.15B, electrodes, wirings, and the like of the touch sensor 595 providedon the back side of the substrate 590 (the side facing the substrate510) are indicated by solid lines for clarity.

As the touch sensor 595, a capacitive touch sensor can be used. Examplesof the capacitive touch sensor are a surface capacitive touch sensor anda projected capacitive touch sensor.

Examples of the projected capacitive touch sensor are a self capacitivetouch sensor and a mutual capacitive touch sensor, which differ mainlyin the driving method. The use of a mutual capacitive type is preferablebecause multiple points can be sensed simultaneously.

An example of using a projected capacitive touch sensor is describedbelow with reference to FIG. 15B.

Note that a variety of sensors that can sense the closeness or thecontact of a sensing target such as a finger, can be used.

The projected capacitive touch sensor 595 includes electrodes 591 andelectrodes 592. The electrodes 591 are electrically connected to any ofthe plurality of wirings 598, and the electrodes 592 are electricallyconnected to any of the other wirings 598.

The electrodes 592 each have a shape of a plurality of quadranglesarranged in one direction with one corner of a quadrangle connected toone corner of another quadrangle as illustrated in FIGS. 15A and 15B.

The electrodes 591 each have a quadrangular shape and are arranged in adirection intersecting with the direction in which the electrodes 592extend.

A wiring 594 electrically connects two electrodes 591 between which theelectrode 592 is positioned. The intersecting area of the electrode 592and the wiring 594 is preferably as small as possible. Such a structureallows a reduction in the area of a region where the electrodes are notprovided, reducing unevenness in transmittance. As a result, unevennessin luminance of light from the touch sensor 595 can be reduced.

Note that the shapes of the electrodes 591 and the electrodes 592 arenot limited to the above-mentioned shapes and can be any of a variety ofshapes. For example, the plurality of electrodes 591 may be provided sothat space between the electrodes 591 are reduced as much as possible,and a plurality of electrodes 592 may be provided with an insulatinglayer sandwiched between the electrodes 591 and the electrodes 592 andmay be spaced apart from each other to form a region not overlappingwith the electrodes 591. In that case, between two adjacent electrodes592, it is preferable to provide a dummy electrode which is electricallyinsulated from these electrodes, whereby the area of a region having adifferent transmittance can be reduced.

The touch sensor 595 includes the substrate 590, the electrodes 591 andthe electrodes 592 provided in a staggered arrangement on the substrate590, an insulating layer 593 covering the electrodes 591 and theelectrodes 592, and the wiring 594 that electrically connects theadjacent electrodes 591 to each other.

An adhesive layer 597 attaches the substrate 590 to the substrate 570 sothat the touch sensor 595 overlaps the display portion 501.

The electrodes 591 and the electrodes 592 are formed using alight-transmitting conductive material. As a light-transmittingconductive material, a conductive oxide such as indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium isadded can be used. Note that a film including graphene may be used aswell. The film including graphene can be formed, for example, byreducing a film containing graphene oxide. As a reducing method, amethod with application of heat or the like can be employed.

The electrodes 591 and 592 may have a mesh shape such that mesh openingsand light-emitting elements overlap with each other. In this case, alow-conductive metal or alloy, for example, can be used for theelectrodes 591 and 592.

Note that, for example, a low-resistance material is preferably used asa material of conductive films such as the electrode 591 and theelectrode 592, i.e., a wiring and an electrode in the touch panel. Forexample, silver, copper, aluminum, a carbon nanotube, graphene, or ametal halide (such as a silver halide) may be used. Alternatively, ametal nanowire including a number of conductors with an extremely smallwidth (for example, a diameter of several nanometers) may be used.Further alternatively, a net-like metal mesh with a conductor may beused. Examples of such materials include an Ag nanowire, a Cu nanowire,an Al nanowire, an Ag mesh, a Cu mesh, and an Al mesh. In the case ofusing an Ag nanowire, a light transmittance of 89% or more and a sheetresistance of 40 ohm/square or more and 100 ohm/square or less can beachieved. Since such a material provides a high light transmittance, themetal nanowire, the metal mesh, a carbon nanotube, graphene, or the likemay be used for an electrode of the display element, such as a pixelelectrode or a common electrode.

The electrodes 591 and the electrodes 592 may be formed by depositing alight-transmitting conductive material on the substrate 590 by asputtering method and then removing an unnecessary portion by any ofvarious patterning techniques such as photolithography.

Examples of a material for the insulating layer 593 are a resin such asacrylic or epoxy resin, a resin having a siloxane bond, and an inorganicinsulating material such as silicon oxide, silicon oxynitride, oraluminum oxide.

Furthermore, openings reaching the electrodes 591 are formed in theinsulating layer 593, and the wiring 594 electrically connects theadjacent electrodes 591. A light-transmitting conductive material can befavorably used as the wiring 594 because the aperture ratio of the touchpanel can be increased. Moreover, a material with higher conductivitythan the conductivities of the electrodes 591 and 592 can be favorablyused for the wiring 594 because electric resistance can be reduced.

One electrode 592 extends in one direction, and a plurality ofelectrodes 592 is provided in the form of stripes.

The wiring 594 intersects with the electrode 592.

Adjacent electrodes 591 are provided with one electrode 592 providedtherebetween. The wiring 594 electrically connects the adjacentelectrodes 591.

Note that the plurality of electrodes 591 is not necessarily arranged inthe direction orthogonal to one electrode 592 and may be arranged tointersect with one electrode 592 at an angle of less than 90 degrees.

One wiring 598 is electrically connected to any of the electrodes 591and 592. Part of the wiring 598 serves as a terminal. For the wiring598, a metal material such as aluminum, gold, platinum, silver, nickel,titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, orpalladium or an alloy material containing any of these metal materialscan be used.

Note that an insulating layer that covers the insulating layer 593 andthe wiring 594 may be provided to protect the touch sensor 595.

Furthermore, a connection layer 599 electrically connects the wiring 598to the FPC 509(2).

As the connection layer 599, any of various anisotropic conductive films(ACF), anisotropic conductive pastes (ACP), or the like can be used.

The adhesive layer 597 has a light-transmitting property. For example, athermosetting resin or an ultraviolet curable resin can be used;specifically, a resin such as an acrylic resin, a urethane resin, anepoxy resin, or a resin having a siloxane bond can be used.

The display portion 501 includes a plurality of pixels arranged in amatrix. Each of the pixels includes a display element and a pixelcircuit for driving the display element.

In this embodiment, an example of using an organic EL element that emitswhite light as a display element will be described; however, the displayelement is not limited to such an element.

For example, organic EL elements that emit light of different colors maybe included in sub-pixels so that the light of different colors can beemitted from the respective sub-pixels.

Structures which are similar to those of the substrate 510, thesubstrate 570, and the bonding layer 121 in Structure Example 1 can beapplied to the substrate 510, the substrate 570, and the bonding layer121 in Structure Example 2.

A pixel includes a sub-pixel 502R, and the sub-pixel 502R includes alight-emitting module 580R.

The sub-pixel 502R includes a first light-emitting element 550R and apixel circuit including a transistor 502 t that can supply electricpower to the first light-emitting element 550R. Furthermore, thelight-emitting module 580R includes the first light-emitting element550R and an optical element (e.g., a coloring layer 567R).

The light-emitting element 550R includes a lower electrode, an upperelectrode, and an EL layer between the lower electrode and the upperelectrode.

The light-emitting module 580R includes the first coloring layer 567R onthe light extraction side.

In the case where the bonding layer 121 is provided on the lightextraction side, the bonding layer 121 is in contact with the firstlight-emitting element 550R and the first coloring layer 567R.

The first coloring layer 567R is positioned in a region overlapping withthe first light-emitting element 550R. Accordingly, part of lightemitted from the light-emitting element 550R passes through the firstcoloring layer 567R and is emitted to the outside of the light-emittingmodule 580R as indicated by an arrow in FIG. 16A.

The display portion 501 includes a light-blocking layer 567BM on thelight extraction side. The light-blocking layer 567BM is provided tosurround the coloring layer (e.g., the first coloring layer 567R).

The display portion 501 includes an anti-reflective layer 567 ppositioned in a region overlapping with pixels. As the anti-reflectivelayer 567 p, a circular polarizing plate can be used, for example.

The display portion 501 includes an insulating film 521. The insulatingfilm 521 covers the transistor 502 t. Note that the insulating film 521can be used as a layer for planarizing unevenness due to the pixelcircuit. A stacked film including a layer that can prevent diffusion ofimpurities can be used as the insulating film 521. This can prevent thereliability of the transistor 502 t or the like from being lowered bydiffusion of impurities.

The display portion 501 includes the light-emitting elements (e.g., thefirst light-emitting element 550R) over the insulating film 521.

The display portion 501 includes, over the insulating film 521, apartition wall 528 that overlaps with an end portion of the first lowerelectrode. In addition, a spacer that controls the distance between thesubstrate 510 and the substrate 570 is provided on the partition wall528.

A scan line driver circuit 503 g(1) includes a transistor 503 t and acapacitor 503 c. Note that the driver circuit can be formed in the sameprocess and over the same substrate as those of the pixel circuits.

The display portion 501 includes the wirings 511 through which signalscan be supplied. The wirings 511 are provided with the terminal 110.Note that the FPC 509(1) through which a signal such as an image signalor a synchronization signal can be supplied is electrically connected tothe terminal 110.

Note that a printed wiring board (PWB) may be attached to the FPC509(1).

The display portion 501 includes wirings such as scan lines, signallines, and power supply lines. Any of the various conductive filmsdescribed above can be used as the wirings.

The protective layer 120 is provided to cover an exposed portion of thetouch panel. Specifically, the protective layer 120 is provided topartially or entirely cover exposed portions of the substrate 590, theadhesive layer 597, the substrate 570 (the flexible substrate 570 b, theadhesive layer 570 c, and the insulating layer 570 a), the bonding layer121, the terminal 110, the substrate 510 (the flexible substrate 510 b,the adhesive layer 510 c, and the insulating layer 510 a), and the like.The protective layer 120 has an opening overlapping with part of thesurface of the conductive layer 110 a of the terminal 110.

Any of various kinds of transistors can be used in the display portion501. A structure in the case of using bottom-gate transistors in thedisplay portion 501 is illustrated in FIGS. 16A and 16B.

For example, a semiconductor layer containing an oxide semiconductor,amorphous silicon, or the like can be used in the transistor 502 t andthe transistor 503 t illustrated in FIG. 16A.

For example, a semiconductor layer containing polycrystalline siliconthat is obtained by crystallization process such as laser annealing canbe used in the transistor 502 t and the transistor 503 t illustrated inFIG. 16B.

A structure in the case of using top-gate transistors in the displayportion 501 is illustrated in FIG. 16C.

For example, a semiconductor layer including polycrystalline silicon, asingle crystal silicon film that is transferred from a single crystalsilicon substrate, or the like can be used in the transistor 502 t andthe transistor 503 t illustrated in FIG. 16C.

Note that the structure in which a FPC 509(2) is connected to thesubstrate 510 side of the substrate 590 is illustrated here; however,the FPC 509(2) may be connected to the opposite side of the substrate590 as shown in FIG. 17. In this manner, a structure in which both ofthe FPC 509(1) and the FPC 509(2) are connected to one surface side ofthe touch panel 505 can be obtained.

Structural Example 3

FIGS. 18A to 18C are cross-sectional views of a touch panel 505B. Thetouch panel 505B described in this embodiment is different from thetouch panel 505 described in Structural Example 2 in that the displayportion 501 displays received image data to the side where thetransistors are provided and that the touch sensor is provided on thesubstrate 510 side of the display portion. Different structures will bedescribed in detail below, and the above description is referred to forthe other similar structures.

The first coloring layer 567R is positioned in a region overlapping withthe first light-emitting element 550R. The light-emitting element 550Rillustrated in FIG. 18A emits light to the side where the transistor 502t is provided. Accordingly, part of light emitted from thelight-emitting element 550R passes through the first coloring layer 567Rand is emitted to the outside of the light-emitting module 580R asindicated by an arrow in FIG. 18A.

The display portion 501 includes a light-blocking layer 567BM on thelight extraction side. The light-blocking layer 567BM is provided tosurround the coloring layer (e.g., the first coloring layer 567R).

The touch sensor 595 is provided on the substrate 510 side of thedisplay portion 501 (see FIG. 18A).

The adhesive layer 597 is provided between the substrate 510 and thesubstrate 590 and attaches the touch sensor 595 to the display portion501.

The protective layer 120 is provided to cover an exposed portion of thetouch panel. Specifically, the protective layer 120 is provided topartially or entirely cover exposed portions of the substrate 570 (theflexible substrate 570 b, the adhesive layer 570 c, and the insulatinglayer 570 a), the bonding layer 121, the substrate 510 (the flexiblesubstrate 510 b, the adhesive layer 510 c, and the insulating layer 510a), the substrate 590, the adhesive layer 597, the terminal 110, thewiring 598, and the like. The protective layer 120 has an openingoverlapping with part of the surfaces of the terminal 110, the wiring598, and the like.

Note that the wiring 598 may be formed using the above-describedconductive material that is not easily oxidized. Alternatively, theabove-described conductive material that is not easily oxidized may beused for a portion that functions as a terminal of the wiring 598.Alternatively, a stacked layer including the above-described conductivematerial that is not easily oxidized may be used for a portion thatfunctions as a terminal of the wiring 598.

Any of various kinds of transistors can be used in the display portion501. FIGS. 18A and 18B illustrates a structure in the case of usingbottom-gate transistors in the display portion 501.

For example, a semiconductor layer containing an oxide semiconductor,amorphous silicon, or the like can be used in the transistor 502 t andthe transistor 503 t illustrated in FIG. 18A.

For example, a semiconductor layer containing polycrystalline silicon orthe like can be used in the transistor 502 t and the transistor 503 tillustrated in FIG. 18B.

A structure in the case of using top-gate transistors in the displayportion 501 is illustrated in FIG. 18C.

For example, a semiconductor layer containing polycrystalline silicon, atransferred single crystal silicon film, or the like can be used in thetransistor 502 t and the transistor 503 t illustrated in FIG. 18C.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

Embodiment 4 [Structure Example of Deposition Apparatus]

An apparatus with which a thin film for forming a functional panel, adisplay panel, a light-emitting panel, a sensor panel, or a touch panelof one embodiment of the present invention can be deposited is describedbelow. The apparatus described below can be preferably used for thedeposition of particularly the protective layer 120 and the like.

[Structure Example of Deposition Apparatus ALD]

FIG. 19 illustrates a deposition apparatus ALD.

The deposition apparatus ALD described in this embodiment includes adeposition chamber 710 and a control portion 712 connected to thedeposition chamber 710 (see FIG. 19).

The control portion 712 includes a control unit (not shown) thatsupplies control signals and flow rate controllers 712 a, 712 b, and 712c to which the control signals are supplied. For example, high-speedvalves can be used as the flow rate controllers. Specifically, flowrates can be precisely controlled by using ALD valves or the like.Furthermore, the control portion 712 includes a heating mechanism 712 hwhich controls the temperature in the flow rate controllers and pipes.

The flow rate controller 712 a is supplied with a control signal, afirst source material, and an inert gas, and has a function of supplyingthe first source material or the inert gas in accordance with thecontrol signal.

The flow rate controller 712 b is supplied with a control signal, asecond source material, and an inert gas and has a function of supplyingthe second source material or the inert gas in accordance with thecontrol signal.

The flow rate controller 712 c is supplied with a control signal, andhas a function of connecting to an evacuation unit 715 in accordancewith the control signal.

<<Source Material Supply Portion>>

A source material supply portion 711 a has a function of supplying thefirst source material and is connected to the flow rate controller 712a.

A source material supply portion 711 b has a function of supplying thesecond source material and is connected to the flow rate controller 712b

A vaporizer, a heating unit, or the like can be used as each of thesource material supply portions. Thus, a gaseous source material can begenerated from a solid or liquid source material.

Note that the number of the source material supply portions is notlimited to two and may be three or more.

<<Source Material>>

Any of a variety of substances can be used as the first source material.

For example, a volatile organometallic compound, a volatile metalalkoxide, or the like can be used as the first source material.

Any of a variety of substances that react with the first source materialcan be used as the second source material. For example, a substance thatcontributes to an oxidation reaction, a substance that contributes to areduction reaction, a substance that contributes to an additionreaction, a substance that contributes to a decomposition reaction, asubstance that contributes to a hydrolysis reaction, or the like can beused as the second source material.

Alternatively, a radical or the like can be used. For example, plasmaobtained by supplying a source material to a plasma source, or the likecan be used. Specifically, an oxygen radical, a nitrogen radical, or thelike can be used.

Note that the second source material used in combination with the firstsource material is preferably a source material that reacts with thefirst source material at a temperature close to room temperature. Forexample, a source material which reacts with the first source materialat a temperature higher than or equal to room temperature and lower thanor equal to 200° C., preferably higher than or equal to 50° C. and lowerthan or equal to 150° C., is preferable.

<<Evacuation Unit>>

The evacuation unit 715 has an evacuating function and is connected tothe flow rate controller 712 c. Note that a trap for capturing a sourcematerial to be evacuated may be provided between an outlet port 714 andthe flow rate controller 712 c. At that time, an evacuated gas ispreferably removed by using a removal unit.

<<Control Portion>>

The control unit supplies the control signals for controlling the flowrate controllers, control signals for controlling the heating mechanism,or the like. For example, in a first step, the first source material issupplied to a surface of a process member 700. Then, in a second step,the second source material which reacts with the first source materialis supplied. Accordingly, a reaction product of the first sourcematerial and the second source material can be deposited onto a surfaceof the process member 700.

The amount of the reaction product to be deposited onto the surface ofthe process member 700 can be controlled by repetition of the first stepand the second step.

The amount of the first source material to be supplied to the processmember 700 is limited to the maximum possible amount of adsorption onthe surface of the process member 700. For example, conditions areselected so that a monomolecular layer of the first source material isformed on the surface of the process member 700, and the formedmonomolecular layer of the first source material is reacted with thesecond source material, whereby a significantly uniform layer containingthe reaction product of the first source material and the second sourcematerial can be formed.

As a result, a variety of materials can be deposited on the surface ofthe process member 700 even when the surface has a complicatedstructure. For example, a film with a thickness of greater than or equalto 3 nm and less than or equal to 200 nm can be formed on the processmember 700.

For example, in the case where a small hole called a pinhole, a crackcalled a microcrack, or the like is formed in the surface of the processmember 700, the pinhole or the microcrack can be filled by depositingmaterial into the pinhole or the microcrack.

When the deposition apparatus ALD is used, a film to be deposited canhave extremely high step coverage. Even in the case where the surface ofthe process member 700 has unevenness, a film with a uniform quality canbe formed on the uneven surface.

The remainder of the first source material and the second sourcematerial are evacuated from the deposition chamber 710 with the use ofthe evacuation unit 715. For example, the evacuation may be performedwhile an inert gas such as argon or nitrogen is introduced.

<<Deposition Chamber>>

The deposition chamber 710 includes an inlet port 713 from which thefirst source material, the second source material, and the inert gas aresupplied, and the outlet port 714 from which the first material, thesecond material, and the inert gas are evacuated.

The deposition chamber 710 includes a support portion 716 which has afunction of supporting one or a plurality of process members 700, aheating mechanism 717 which has a function of heating the one orplurality of process members, and a door 718 which has a function ofopening or closing to load and unload the one or plurality of processmembers 700.

For example, a resistive heater, an infrared lamp, or the like can beused as the heating mechanism 717.

The heating mechanism 717 has a function of heating up, for example, to80° C. or higher, 100° C. or higher, or 150° C. or higher.

The heating mechanism 717 heats the one or plurality of process members700 to a temperature higher than or equal to room temperature and lowerthan or equal to 200° C., preferably higher than or equal to 50° C. andlower than or equal to 150° C.

The deposition chamber 710 also includes a pressure regulator and apressure detector.

<<Support Portion>>

The support portion 716 supports the one or plurality of process members700. Thus, an insulating film, for example, can be formed over the oneor the plurality of process members 700 in each treatment.

For the process member 700, in addition to a substrate, a functionalpanel, a display device, a light-emitting panel, a sensor panel, a touchpanel, a display device, an input device, or the functional panel, thedisplay panel, the light-emitting panel, the sensor panel, the touchpanel, or the like to which a module such as an FPC is connected can beused.

[Example of Film]

Films which can be formed using the deposition apparatus ALD describedin this embodiment will be described.

For example, a film containing an oxide, a nitride, a fluoride, asulfide, a ternary compound, a metal, or a polymer can be formed.

For example, a material containing aluminum oxide, hafnium oxide,aluminum silicate, hafnium silicate, lanthanum oxide, silicon oxide,strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobiumoxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandiumoxide, erbium oxide, vanadium oxide, indium oxide, or the like can bedeposited.

For example, a material containing aluminum nitride, hafnium nitride,silicon nitride, tantalum nitride, titanium nitride, niobium nitride,molybdenum nitride, zirconium nitride, gallium nitride, or the like canbe deposited.

For example, a material containing copper, platinum, ruthenium,tungsten, iridium, palladium, iron, cobalt, nickel, or the like can bedeposited.

For example, a material containing zinc sulfide, strontium sulfide,calcium sulfide, lead sulfide, calcium fluoride, strontium fluoride,zinc fluoride, or the like can be deposited.

For example, a material that includes a nitride containing titanium andaluminum, an oxide containing titanium and aluminum, an oxide containingaluminum and zinc, a sulfide containing manganese and zinc, a sulfidecontaining cerium and strontium, an oxide containing erbium andaluminum, an oxide containing yttrium and zirconium, or the like can bedeposited.

<<Film Containing Aluminum Oxide>>

For example, a gas obtained by vaporizing a source material containingan aluminum precursor compound can be used as the first source material.Specifically, trimethylaluminum (TMA, or Al(CH₃)₃ (chemical formula)),tris(dimethylamide)aluminum, triisobutylaluminum, and aluminumtris(2,2,6,6-tetramethyl-3,5-heptanedionate), or the like can be used.

Water vapor (chemical formula: H₂O) can be used as the second sourcematerial.

With the use of the deposition apparatus ALD, a film containing aluminumoxide can be formed from the first source material and the second sourcematerial

<<Film Containing Hafnium Oxide>>

For example, a gas obtained by vaporizing a source material containing ahafnium precursor compound can be used as the first source material.Specifically, a source material containing hafnium amide such astetrakis(dimethylamide)hafnium (TDMAH; chemical formula: Hf[N(CH₃)₂]₄)or tetrakis(ethylmethylamide)hafnium can be used.

Ozone can be used as the second source material.

With the use of the deposition apparatus ALD, a film containing hafniumoxide can be formed from the first source material and the second sourcematerial.

<<Film Containing Tungsten>>

For example, a WF₆ gas can be used as the first source material.

A B₂H₆ gas, an SiH₄ gas, or the like can be used as the second sourcematerial.

With the use of the deposition apparatus ALD, a film containing tungstencan be formed from the first source material and second source material.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

Embodiment 5

In this embodiment, electronic devices and lighting devices of oneembodiment of the present invention will be described with reference todrawings.

Electronic devices and lighting devices can be manufactured by using thefunctional panel, the display panel, the light-emitting panel, thesensor panel, the touch panel, the input device, the display device, orthe input/output device of one embodiment of the present invention.Highly reliable electronic devices and lighting devices with curvedsurfaces can be manufactured by using the input device, the displaydevice, or the input/output device of one embodiment of the presentinvention. In addition, flexible and highly reliable electronic devicesand lighting devices can be manufactured by using the input device, thedisplay device, or the input/output device of one embodiment of thepresent invention. Furthermore, electronic devices and lighting devicesincluding touch sensors with improved detection sensitivity can bemanufactured by using the input device or the input/output device of oneembodiment of the present invention.

Examples of electronic devices include a television set (also referredto as a television or a television receiver), a monitor of a computer orthe like, a digital camera, a digital video camera, a digital photoframe, a mobile phone (also referred to as a mobile phone device), aportable game machine, a portable information terminal, an audioreproducing device, a large game machine such as a pinball machine, andthe like.

The electronic device or the lighting device of one embodiment of thepresent invention has flexibility and therefore can be incorporatedalong a curved inside/outside wall surface of a house or a building or acurved interior/exterior surface of a car.

Furthermore, the electronic device of one embodiment of the presentinvention may include a secondary battery. It is preferable that thesecondary battery be capable of being charged by contactless powertransmission.

As examples of the secondary battery, a lithium ion secondary batterysuch as a lithium polymer battery (lithium ion polymer battery) using agel electrolyte, a lithium ion battery, a nickel-hydride battery, anickel-cadmium battery, an organic radical battery, a lead-acid battery,an air secondary battery, a nickel-zinc battery, and a silver-zincbattery can be given.

The electronic device of one embodiment of the present invention mayinclude an antenna. When a signal is received by the antenna, theelectronic device can display an image, data, or the like on a displayportion. When the electronic device includes a secondary battery, theantenna may be used for contactless power transmission.

FIGS. 20A, 20B, 20C1, 20C2, 20D, and 20E illustrate examples ofelectronic devices including a display portion 7000 with a curvedsurface. The display surface of the display portion 7000 is bent, andimages can be displayed on the bent display surface. The display portion7000 may be flexible.

The display portion 7000 can be formed using the functional panel, thedisplay panel, the light-emitting panel, the sensor panel, the touchpanel, the display device, the input/output device, or the like of oneembodiment of the present invention. One embodiment of the presentinvention makes it possible to provide a highly reliable electronicdevice having a curved display portion.

FIG. 20A illustrates an example of a mobile phone. A mobile phone 7100includes a housing 7101, the display portion 7000, operation buttons7103, an external connection port 7104, a speaker 7105, a microphone7106, and the like.

The mobile phone 7100 illustrated in FIG. 20A includes a touch sensor inthe display portion 7000. Moreover, operations such as making a call andinputting a letter can be performed by touch on the display portion 7000with a finger, a stylus, or the like.

With the operation buttons 7103, power ON or OFF can be switched. Inaddition, types of images displayed on the display portion 7000 can beswitched; for example, switching from a mail creation screen to a mainmenu screen can be performed.

FIG. 20B illustrates an example of a television set. In a television set7200, the display portion 7000 is incorporated into a housing 7201.Here, the housing 7201 is supported by a stand 7203.

The television set 7200 illustrated in FIG. 20B can be operated with anoperation switch of the housing 7201 or a separate remote controller7211. The display portion 7000 may include a touch sensor. The displayportion 7000 can be operated by touching the display portion with afinger or the like. The remote controller 7211 may be provided with adisplay portion for displaying data output from the remote controller7211. With operation keys or a touch panel of the remote controller7211, channels and volume can be controlled and images displayed on thedisplay portion 7000 can be controlled.

The television set 7200 is provided with a receiver, a modem, and thelike. A general television broadcast can be received with the receiver.When the television set is connected to a communication network with orwithout wires via the modem, one-way (from a transmitter to a receiver)or two-way (between a transmitter and a receiver or between receivers)data communication can be performed.

FIGS. 20C1, 20C2, 20D, and 20E illustrate examples of a portableinformation terminal. Each of the portable information terminalsincludes a housing 7301 and the display portion 7000. Each of theportable information terminals may also include an operation button, anexternal connection port, a speaker, a microphone, an antenna, abattery, or the like. The display portion 7000 is provided with a touchsensor. An operation of the portable information terminal can beperformed by touching the display portion 7000 with a finger, a stylus,or the like.

FIG. 20C1 is a perspective view of a portable information terminal 7300.FIG. 20C2 is a top view of the portable information terminal 7300. FIG.20D is a perspective view of a portable information terminal 7310. FIG.20E is a perspective view of a portable information terminal 7320.

Each of the portable information terminals illustrated in thisembodiment functions as, for example, one or more of a telephone set, anotebook, and an information browsing system. Specifically, the portableinformation terminals each can be used as a smartphone. Each of theportable information terminals illustrated in this embodiment is capableof executing a variety of applications such as mobile phone calls,e-mailing, reading and editing texts, music reproduction, Internetcommunication, and a computer game, for example.

The portable information terminals 7300, 7310, and 7320 can displaycharacters and image information on its plurality of surfaces. Forexample, as illustrated in FIGS. 20C1 and 20D, three operation buttons7302 can be displayed on one surface, and information 7303 indicated bya rectangle can be displayed on another surface. FIGS. 20C1 and 20C2illustrate an example in which information is displayed at the top ofthe portable information terminal. FIG. 20D illustrates an example inwhich information is displayed on the side of the portable informationterminal. Information may be displayed on three or more surfaces of theportable information terminal. FIG. 20E illustrates an example whereinformation 7304, information 7305, and information 7306 are displayedon different surfaces.

Examples of the information include notification from a socialnetworking service (SNS), display indicating reception of an e-mail oran incoming call, the title of an e-mail or the like, the sender of ane-mail or the like, the date, the time, remaining battery, and thereception strength of an antenna. Alternatively, the operation button,an icon, or the like may be displayed instead of the information.

For example, a user of the portable information terminal 7300 can seethe display (here, the information 7303) with the portable informationterminal 7300 put in a breast pocket of his/her clothes.

Specifically, a caller's phone number, name, or the like of an incomingcall is displayed in a position that can be seen from above the portableinformation terminal 7300. Thus, the user can see the display withouttaking out the portable information terminal 7300 from the pocket anddecide whether to answer the call.

FIGS. 20F to 20H each illustrate an example of a lighting device havinga curved light-emitting portion.

The light-emitting portion included in each of the lighting devicesillustrated in FIGS. 20F to 20H can be manufactured using the functionalpanel, the display panel, the light-emitting panel, the sensor panel,the touch panel, the display device, the input/output device, or thelike of one embodiment of the present invention. According to oneembodiment of the present invention, a highly reliable lighting devicehaving a curved light-emitting portion can be provided.

A lighting device 7400 illustrated in FIG. 20F includes a light-emittingportion 7402 with a wave-shaped light-emitting surface and thus is agood-design lighting device.

A light-emitting portion 7412 included in a lighting device 7410illustrated in FIG. 20G has two convex-curved light-emitting portionssymmetrically placed. Thus, all directions can be illuminated with thelighting device 7410 as a center.

A lighting device 7420 illustrated in FIG. 20H includes a concave-curvedlight-emitting portion 7422. This is suitable for illuminating aspecific range because light emitted from the concave-curvedlight-emitting portion 7422 is collected to the front of the lightingdevice 7420. In addition, with this structure, a shadow is less likelyto be produced.

The light-emitting portion included in each of the lighting devices7400, 7410 and 7420 may be flexible. The light-emitting portion may befixed on a plastic member, a movable frame, or the like so that alight-emitting surface of the light-emitting portion can be bent freelydepending on the intended use.

The lighting devices 7400, 7410, and 7420 each include a stage 7401provided with an operation switch 7403 and the light-emitting portionsupported by the stage 7401.

Note that although the lighting device in which the light-emittingportion is supported by the stage is described as an example here, ahousing provided with a light-emitting portion can be fixed on a ceilingor suspended from a ceiling. Since the light-emitting surface can becurved, the light-emitting surface is curved to have a concave shape,whereby a particular region can be brightly illuminated, or thelight-emitting surface is curved to have a convex shape, whereby a wholeroom can be brightly illuminated.

FIGS. 21A1, 21A2, 21B, 21C, 21D, 21E, 21F, 21G, 21H, and 21I eachillustrate an example of a portable information terminal including adisplay portion 7001 having flexibility.

The display portion 7001 is manufactured using the functional panel, thedisplay panel, the light-emitting panel, the sensor panel, the touchpanel, the display device, the input/output device, or the like of oneembodiment of the present invention. For example, a display device, oran input/output device that can be bent with a radius of curvature ofgreater than or equal to 0.01 mm and less than or equal to 150 mm can beused. The display portion 7001 may include a touch sensor so that theportable information terminal can be operated by touching the displayportion 7001 with a finger or the like. One embodiment of the presentinvention makes it possible to provide a highly reliable electronicdevice including a display portion having flexibility.

FIGS. 21A1 and 21A2 are a perspective view and a side view illustratingan example of the portable information terminal, respectively. Aportable information terminal 7500 includes a housing 7501, the displayportion 7001, a display portion tab 7502, operation buttons 7503, andthe like.

The portable information terminal 7500 includes a rolled flexibledisplay portion 7001 in the housing 7501.

The portable information terminal 7500 can receive a video signal with acontrol portion incorporated therein and can display the received videoon the display portion 7001. The portable information terminal 7500incorporates a battery. A terminal portion for connecting a connectormay be included in the housing 7501 so that a video signal or power canbe directly supplied from the outside with a wiring.

By pressing the operation buttons 7503, power ON/OFF, switching ofdisplayed videos, and the like can be performed. Although FIGS. 21A1,21A2, and 21B illustrate an example where the operation buttons 7503 arepositioned on a side surface of the portable information terminal 7500,one embodiment of the present invention is not limited thereto. Theoperation buttons 7503 may be placed on a display surface (a frontsurface) or a rear surface of the portable information terminal 7500.

FIG. 21B illustrates the portable information terminal 7500 in a statewhere the display portion 7001 is pulled out with the display portiontab 7502. Videos can be displayed on the display portion 7001 in thisstate. In addition, the portable information terminal 7500 may performdifferent displays in the state where part of the display portion 7001is rolled as shown in FIG. 21A1 and in the state where the displayportion 7001 is pulled out with the display portion tab 7502 as shown inFIG. 21B. For example, in the state shown in FIG. 21A1, the rolledportion of the display portion 7001 is put in a non-display state, whichresults in a reduction in power consumption of the portable informationterminal 7500.

A reinforcement frame may be provided for a side portion of the displayportion 7001 so that the display portion 7001 has a flat display surfacewhen pulled out.

Note that in addition to this structure, a speaker may be provided forthe housing so that sound is output with an audio signal receivedtogether with a video signal.

FIGS. 21C to 21E illustrate an example of a foldable portableinformation terminal. FIG. 21C illustrates a portable informationterminal 7600 that is opened. FIG. 21D illustrates the portableinformation terminal 7600 that is being opened or being folded. FIG. 21Eillustrates the portable information terminal 7600 that is folded. Theportable information terminal 7600 is highly portable when folded, andis highly browsable when opened because of a seamless large displayarea.

The display portion 7001 is supported by three housings 7601 joinedtogether by hinges 7602. By folding the portable information terminal7600 at a connection portion between two housings 7601 with the hinges7602, the portable information terminal 7600 can be reversibly changedin shape from an opened state to a folded state.

FIGS. 21F and 21G illustrate an example of a foldable portableinformation terminal. FIG. 21F illustrates a portable informationterminal 7650 that is folded so that the display portion 7001 is on theinside. FIG. 21G illustrates the portable information terminal 7650 thatis folded so that the display portion 7001 is on the outside. Theportable information terminal 7650 includes the display portion 7001 anda non-display portion 7651. When the portable information terminal 7650is not used, the portable information terminal 7650 is folded so thatthe display portion 7001 is on the inside, whereby the display portion7001 can be prevented from being contaminated or damaged.

FIG. 21H illustrates an example of a flexible portable informationterminal. A portable information terminal 7700 includes a housing 7701and the display portion 7001. The portable information terminal 7700 mayinclude buttons 7703 a and 7703 b which serve as input means, speakers7704 a and 7704 b which serve as sound output means, an externalconnection port 7705, a microphone 7706, or the like. A flexible battery7709 can be included in the portable information terminal 7700. Thebattery 7709 may be arranged to overlap with the display portion 7001,for example.

The housing 7701, the display portion 7001, the battery 7709 areflexible. Thus, it is easy to curve the portable information terminal7700 into a desired shape or to twist the portable information terminal7700. For example, the portable information terminal 7700 can be foldedsuch that the display portion 7001 faces inward or outward. The portableinformation terminal 7700 can be used in a rolled state. Since thehousing 7701 and the display portion 7001 can be transformed freely inthis manner, the portable information terminal 7700 is less likely to bebroken even when the portable information terminal 7700 falls down orexternal stress is applied to the portable information terminal 7700.

The portable information terminal 7700 can be used conveniently invarious situations because the portable information terminal 7700 islightweight. For example, the portable information terminal 7700 can beused in the state where the upper portion of the housing 7701 issuspended by a clip or the like, or in the state where the housing 7701is fixed to a wall by magnets or the like.

FIG. 21I illustrates an example of a wrist-watch-type portableinformation terminal. The portable information terminal 7800 includes aband 7801, the display portion 7001, an input-output terminal 7802,operation buttons 7803, and the like. The band 7801 has a function of ahousing. A flexible battery 7805 can be included in the portableinformation terminal 7800. The battery 7805 may overlap with the displayportion 7001 and the band 7801, for example.

The band 7801, the display portion 7001, and the battery 7805 haveflexibility. Thus, the portable information terminal 7800 can be easilycurved to have a desired shape.

With the operation buttons 7803, a variety of functions such as timesetting, ON/OFF of the power, ON/OFF of wireless communication, settingand cancellation of silent mode, and setting and cancellation of powersaving mode can be performed. For example, the functions of theoperation buttons 7803 can be set freely by the operating systemincorporated in the portable information terminal 7800.

By touching an icon 7804 displayed on the display portion 7001 with afinger or the like, application can be started.

The portable information terminal 7800 can employ near fieldcommunication that is a communication method based on an existingcommunication standard. In that case, for example, mutual communicationbetween the portable information terminal 7800 and a headset capable ofwireless communication can be performed, and thus hands-free calling ispossible.

The portable information terminal 7800 may include the input-outputterminal 7802. In the case where the input-output terminal 7802 isincluded in the portable information terminal 7800, data can be directlytransmitted to and received from another information terminal via aconnector. Charging through the input-output terminal 7802 is alsopossible. Note that charging of the portable information terminaldescribed as an example in this embodiment can be performed bycontactless power transmission without using the input-output terminal.

FIG. 22A is an external view of an automobile 9700. FIG. 22B illustratesa driver's seat of the automobile 9700. The automobile 9700 includes acar body 9701, wheels 9702, a dashboard 9703, lights 9704, and the like.The display device or input/output device of one embodiment of thepresent invention can be used in a display portion or the like of theautomobile 9700. For example, the functional panel, the display panel,the light-emitting panel, the sensor panel, the touch panel, the displaydevice, or the input/output device of one embodiment of the presentinvention can be used in display portions 9710 to 9715 illustrated inFIG. 22B.

The display portion 9710 and the display portion 9711 are displaydevices or input/output devices provided in an automobile windshield.The display device or input/output device of one embodiment of thepresent invention can be a see-through display device or input/outputdevice, through which the opposite side can be seen, by using alight-transmitting conductive material for its electrodes. Such asee-through display device or input/output device does not hinderdriver's vision during the driving of the automobile 9700. Therefore,the display device or input/output device of one embodiment of thepresent invention can be provided in the windshield of the automobile9700. Note that in the case where a transistor or the like for drivingthe display device or input/output device is provided in the displaydevice or input/output device, a transistor having light-transmittingproperties, such as an organic transistor using an organic semiconductormaterial or a transistor using an oxide semiconductor, is preferablyused.

The display portion 9712 is a display device or input/output deviceprovided on a pillar portion. For example, an image taken by an imagingunit provided in the car body is displayed on the display portion 9712,whereby the view hindered by the pillar portion can be compensated. Thedisplay portion 9713 is a display device or an input device provided onthe dashboard. For example, an image taken by an imaging unit providedin the car body is displayed on the display portion 9713, whereby theview hindered by the dashboard can be compensated. That is, bydisplaying an image taken by an imaging unit provided on the outside ofthe automobile, blind areas can be eliminated and safety can beincreased. Displaying an image to compensate for the area which a drivercannot see makes it possible for the driver to confirm safety easily andcomfortably.

FIG. 22C illustrates the inside of a car in which a bench seat is usedas a driver seat and a front passenger seat. A display portion 9721 is adisplay device or input/output device provided in a door portion. Forexample, the display portion 9721 can compensate for the view hinderedby the door portion by showing an image taken by an imaging unitprovided on the car body. A display portion 9722 is a display device orinput/output device provided in a steering wheel. A display portion 9723is a display device or input/output device provided in the middle of aseating face of the bench seat. Note that the display device orinput/output device can be used as a seat heater by providing thedisplay device or input/output device on the seating face or backrestand by using heat generated by the display device or input/output deviceas a heat source.

The display portion 9714, the display portion 9715, and the displayportion 9722 can provide a variety of kinds of information such asnavigation data, a speedometer, a tachometer, a mileage, a fuel meter, agearshift indicator, and air-condition setting. The content, layout, orthe like of the display on the display portions can be changed freely bya user as appropriate. The information listed above can also bedisplayed on the display portions 9710 to 9713, 9721, and 9723. Thedisplay portions 9710 to 9715 and 9721 to 9723 can also be used aslighting devices. The display portions 9710 to 9715 and 9721 to 9723 canalso be used as heating devices.

The display portions each including the functional panel, the displaypanel, the light-emitting panel, the sensor panel, the touch panel, thedisplay device, or the input/output device of one embodiment of thepresent invention can be flat, in which case the functional panel, thedisplay panel, the light-emitting panel, the sensor panel, the touchpanel, the display device, or input/output device of one embodiment ofthe present invention does not necessarily have a curved surface orflexibility.

FIG. 22D illustrates a portable game machine including a housing 901, ahousing 902, a display portion 903, a display portion 904, a microphone905, a speaker 906, an operation button 907, a stylus 908, and the like.

The portable game machine illustrated in FIG. 22D includes two displayportions 903 and 904. Note that the number of display portions of anelectronic device of one embodiment of the present invention is notlimited to two and can be one or three or more as long as at least onedisplay portion includes the functional panel, the display panel, thelight-emitting panel, the sensor panel, the touch panel, the displaydevice, or the input/output device of one embodiment of the presentinvention.

FIG. 22E illustrates a laptop personal computer, which includes ahousing 921, a display portion 922, a keyboard 923, a pointing device924, and the like.

The functional panel, the display panel, the light-emitting panel, thesensor panel, the touch panel, the display device, or the input/outputdevice of one embodiment of the present invention can be used in thedisplay portion 922.

FIG. 23A is an external view of a camera 8000. The camera 8000 includesa housing 8001, a display portion 8002, an operation button 8003, ashutter button 8004, and a connection portion 8005, and the like. A lens8006 can be put on the camera 8000.

The connection portion 8005 includes an electrode to connect with afinder 8100, which is described below, a stroboscope, or the like.

Although the lens 8006 of the camera 8000 here is detachable from thehousing 8001 for replacement, the lens 8006 may be included in thehousing.

Images can be taken by touching the shutter button 8004. In addition,images can be taken by touching the display portion 8002 which serves asa touch panel.

The functional panel, the display panel, the light-emitting panel, thesensor panel, the touch panel, the display device, or the input/outputdevice of one embodiment of the present invention can be used in thedisplay portion 8002.

FIG. 23B shows the camera 8000 with the finder 8100 connected.

The finder 8100 includes a housing 8101, a display portion 8102, and abutton 8103.

The housing 8101 includes a connection portion for the connectionportion 8005 of the camera 8000, and the finder 8100 can be connected tothe camera 8000. The connection portion includes an electrode, and animage or the like received from the camera 8000 through the electrodecan be displayed on the display portion 8102.

The button 8103 has a function of a power button, and the displayportion 8102 can be turned on and off with the button 8103.

The functional panel, the display panel, the light-emitting panel, thesensor panel, the touch panel, the display device, or the input/outputdevice of one embodiment of the present invention can be used in thedisplay portion 8102.

Although the camera 8000 and the finder 8100 are separate and detachableelectronic devices in FIGS. 23A and 23B, the housing 8001 of the camera8000 may include a finder having the display device or input/outputdevice of one embodiment of the present invention.

FIG. 23C illustrates an external view of a head-mounted display 8200.

The head-mounted display 8200 includes a mounting portion 8201, a lens8202, a main body 8203, a display portion 8204, a cable 8205, and thelike. The mounting portion 8201 includes a battery 8206.

Power is supplied from the battery 8206 to the main body 8203 throughthe cable 8205. The main body 8203 includes a wireless receiver or thelike to receive video data, such as image data, and display it on thedisplay portion 8204. In addition, the movement of the eyeball and theeyelid of a user can be captured by a camera in the main body 8203 andthen coordinates of the points the user looks at can be calculated usingthe captured data to utilize the eye of the user as an input means.

The mounting portion 8201 may include a plurality of electrodes to be incontact with the user. The main body 8203 may be configured to sensecurrent flowing through the electrodes with the movement of the user'seyeball to recognize the direction of his or her eyes. The main body8203 may be configured to sense current flowing through the electrodesto monitor the user's pulse. The mounting portion 8201 may includesensors, such as a temperature sensor, a pressure sensor, or anacceleration sensor so that the user's biological information can bedisplayed on the display portion 8204. The main body 8203 may beconfigured to sense the movement of the user's head or the like to movean image displayed on the display portion 8204 in synchronization withthe movement of the user's head or the like.

The functional panel, the display panel, the light-emitting panel, thesensor panel, the touch panel, the display device, or the input/outputdevice of one embodiment of the present invention can be used in thedisplay portion 8204.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

This application is based on Japanese Patent Application serial no.2014-265107 filed with Japan Patent Office on Dec. 26, 2014, the entirecontents of which are hereby incorporated by reference.

1. A functional panel comprising: a first substrate; a bonding layer; afunctional element; a protective layer; and a terminal, wherein thebonding layer is positioned over the first substrate, wherein thefunctional element is surrounded by the first substrate and the bondinglayer, wherein the terminal is electrically connected to the functionalelement, wherein the protective layer is provided to be in contact witha side surface of the first substrate and an exposed surface of thebonding layer, and wherein a part of a surface of the terminal isexposed without being covered with the protective layer.
 2. Thefunctional panel according to claim 1, wherein the part of the surfaceof the terminal includes a material having a lower ionization tendencythan hydrogen.
 3. The functional panel according to claim 2, wherein thematerial is palladium, iridium, gold, or platinum.
 4. The functionalpanel according to claim 1, wherein the protective layer includes atleast one of aluminum oxide, hafnium oxide, zirconium oxide, titaniumoxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalumoxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide,cobalt oxide, tellurium oxide, barium titanate, titanium nitride,tantalum nitride, aluminum nitride, tungsten nitride, cobalt nitride,manganese nitride, and hafnium nitride.
 5. The functional panelaccording to claim 1, wherein the terminal has a stacked structure of afirst layer and a second layer over the first layer, wherein a part of asurface of the second layer is exposed, wherein the second layerincludes a material having a lower ionization tendency than a materialincluded in the first layer.
 6. The functional panel according to claim5, wherein the second layer includes palladium, iridium, gold, orplatinum.
 7. The functional panel according to claim 1, wherein thefirst substrate has flexibility.
 8. The functional panel according toclaim 1, further comprising an FPC, wherein the FPC is electricallyconnected to the terminal.
 9. A display panel, comprising the functionalpanel according to claim 1, wherein the functional element includes adisplay element.
 10. A display panel, comprising the functional panelaccording to claim 1, wherein the functional element includes a displayelement and a transistor.
 11. A sensor panel, comprising the functionalpanel according to claim 1, wherein the functional element includes asensor element.
 12. A light-emitting panel comprising a functionalpanel, the functional panel comprising: a first substrate; a bondinglayer; a functional element; a protective layer; and a terminal, whereinthe bonding layer is positioned over the first substrate, wherein thefunctional element is surrounded by the first substrate and the bondinglayer, wherein the functional element includes a light-emitting element,wherein the terminal is electrically connected to the functionalelement, wherein the protective layer is provided to be in contact witha side surface of the first substrate and an exposed surface of thebonding layer, and wherein a part of a surface of the terminal isexposed without being covered with the protective layer.
 13. Thelight-emitting panel according to claim 12, wherein the part of thesurface of the terminal includes a material having a lower ionizationtendency than hydrogen.
 14. The light-emitting panel according to claim13, wherein the material is palladium, iridium, gold, or platinum. 15.The light-emitting panel according to claim 12, wherein the protectivelayer includes at least one of aluminum oxide, hafnium oxide, zirconiumoxide, titanium oxide, zinc oxide, indium oxide, tin oxide, indium tinoxide, tantalum oxide, silicon oxide, manganese oxide, nickel oxide,erbium oxide, cobalt oxide, tellurium oxide, barium titanate, titaniumnitride, tantalum nitride, aluminum nitride, tungsten nitride, cobaltnitride, manganese nitride, and hafnium nitride.
 16. The light-emittingpanel according to claim 12, wherein the terminal has a stackedstructure of a first layer and a second layer over the first layer,wherein a part of a surface of the second layer is exposed, wherein thesecond layer includes a material having a lower ionization tendency thana material included in the first layer.
 17. The light-emitting panelaccording to claim 16, wherein the second layer includes palladium,iridium, gold, or platinum.
 18. The light-emitting panel according toclaim 12, wherein the first substrate has flexibility.
 19. Thelight-emitting panel according to claim 12, further comprising an FPC,wherein the FPC is electrically connected to the terminal.
 20. A displaypanel, comprising the light-emitting panel according to claim 12,wherein the functional element includes a display element.
 21. A displaypanel, comprising the light-emitting panel according to claim 12,wherein the functional element includes a display element and atransistor.
 22. A sensor panel, comprising the light-emitting panelaccording to claim 12, wherein the functional element includes a sensorelement.